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A kind of gold-beryllium alloy material for semiconductor device and its preparation method

An alloy material and semiconductor technology, applied in the field of gold beryllium alloy materials for semiconductor devices and their preparation, can solve the problems of special Be chemical properties, personal injury, and reduce product purity, achieve precise control of coating uniformity, overcome brittleness, The effect of improving processability

Active Publication Date: 2020-10-16
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With this secondary smelting method, it is easy to introduce impurities, thereby reducing the purity of the product; at the same time, in the process of synthesizing the master alloy, due to the high content of Be, and the special chemical properties of Be, it is easy to oxidize and has high toxicity. , so the requirements for the sealing of the equipment are extremely high, and the operator also needs to do a good job in safety protection, otherwise it will cause great harm to the person.

Method used

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  • A kind of gold-beryllium alloy material for semiconductor device and its preparation method
  • A kind of gold-beryllium alloy material for semiconductor device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The gold-beryllium alloy material whose nominal composition is AuBe0.5 (the beryllium content is 0.5%, and the remainder is gold) is prepared in the following ways:

[0034] (1) Using gold and beryllium metal as raw materials, the purity of gold is not less than 4N, and the purity of beryllium is not less than 3N; the ingredients are formulated according to Be 0.55%, and the rest is gold. Beryllium is wrapped with gold sheets and placed in the hopper above the vacuum induction melting furnace; the remaining gold materials are placed in graphite crucibles;

[0035] (2) Vacuum until the vacuum degree reaches 5×10 -2 After Pa, open the filling valve and fill the furnace with high-purity argon to 0.05MPa;

[0036] (3) Start to transmit electricity slowly, and induction heating causes the gold in the crucible to start to melt;

[0037] (4) After the gold is completely melted, open the feeding hopper, so that the gold flakes and the beryllium material wrapped therein are ad...

Embodiment 2

[0046] The preparation composition is the gold-beryllium alloy material of AuBe0.7 (the beryllium content is 0.7%, and the remainder is gold), and its preparation method is:

[0047] (1) Using gold and beryllium metal as raw materials, the purity of gold is not less than 4N, and the purity of beryllium is not less than 3N; the ingredients are formulated according to Be 0.8%, and the rest is gold. Beryllium is wrapped with gold sheets and placed in the hopper above the vacuum induction melting furnace; the remaining gold materials are placed in graphite crucibles;

[0048] (2) vacuumize, fill with argon, smelt, refine, cast according to the method for embodiment 1, obtain gold-beryllium alloy ingot;

[0049] (3) Carry out heat treatment to the alloy ingot obtained in step (2) by using a heating furnace, the heat treatment temperature is 480°C, and the time is 35min;

[0050] (4) The gold-beryllium alloy ingot is subjected to thermoplastic processing by using plastic processing...

Embodiment 3

[0055] The preparation composition is the gold-beryllium alloy material of AuBe1 (the beryllium content is 1%, and the remainder is gold), and its preparation method is:

[0056] (1) Using gold and beryllium metal as raw materials, the purity of gold is not less than 4N, and the purity of beryllium is not less than 3N; the ingredients are formulated according to Be 1.1%, and the rest is gold. Beryllium is wrapped with gold sheets and placed in the hopper above the vacuum induction melting furnace; the remaining gold materials are placed in graphite crucibles;

[0057] (2) vacuumize, fill with argon, smelt, refine, cast according to the method for embodiment 1, obtain gold-beryllium alloy ingot;

[0058] (3) Carry out heat treatment to the alloy ingot obtained in step (2) by using a heating furnace, the heat treatment temperature is 500° C., and the time is 30 min;

[0059] (4) The gold-beryllium alloy ingot is subjected to thermoplastic processing by using plastic processing ...

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Abstract

The invention discloses a semiconductor device gold beryllium alloy material and a preparation method thereof. The method comprises the following steps that 1) gold metal and beryllium metal are usedas raw materials, a vacuum induction smelting furnace is used, after the gold is completely melted, the beryllium metal is added, and smelting and casting are conducted to obtain a gold beryllium alloy cast ingot, wherein the alloy cast ingot comprises beryllium with the weight percentage equal to nominal 0.5%-2% plus a certain ratio, and the balance gold; 2) heat treatment is conducted on the alloy cast ingot obtained in the step 1 through a heating furnace; 3) thermoplastic processing is conducted on the cast ingot in the thickness direction by means of plastic processing equipment; 4) tempering heat treatment is conducted on a blank in the heating furnace every 1-2 procedures; 5) the step 3) and the step 4) are repeated until the required thickness of a plate is obtained; and 6) a stamping mold is adopted to machine the plate into the required gold beryllium alloy material. The gold beryllium alloy material obtained by the method is uniform in component, stable in alloy, ands regular in shape and can meet the performance requirements of ohmic contact electrodes of a semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of evaporation film materials required for semiconductor devices in the microelectronics industry, and in particular relates to a gold-beryllium alloy material for semiconductor devices and a preparation method thereof. Background technique [0002] Gold-beryllium alloy materials are used in the preparation of ohmic contact electrodes for semiconductor devices such as GaP, GaAs and GaN. With the rapid development of my country's semiconductor industry in recent years, the demand for gold-beryllium alloys is increasing day by day. At the same time, the quality requirements for products are getting higher and higher. First of all, the alloy composition of the product is uniform and stable, and the requirements for purity are relatively high. Most of the existing gold-beryllium material preparation methods in China are to first synthesize a gold-beryllium master alloy with a high beryllium content, and then us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C5/02C22C1/02C22F1/14
CPCC22C1/02C22C5/02C22F1/14
Inventor 张巧霞郭姗姗万小勇薛宏宇陈明张晓娜庞欣贺昕王绍帅
Owner GRIKIN ADVANCED MATERIALS
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