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Crucible structure for growing sapphire crystals

A sapphire crystal and crucible technology, applied in the field of crystal manufacturing, to achieve the effects of reducing pressure, convenient disassembly, and simple installation

Pending Publication Date: 2019-03-29
内蒙古晶环电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If it is necessary to grow sapphire crystals weighing more than 300kg, this technical bottleneck is more obvious

Method used

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  • Crucible structure for growing sapphire crystals

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Embodiment Construction

[0021] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] Such as figure 1 As shown, the crucible shaft 9 is fixed on the furnace bottom plate of the furnace barrel 2, and the side insulation 4, the electrode column 8, and the heater 7 are installed in sequence. The heater 7 is installed on the electrode column 8, and the crucible 5 is installed on the crucible shaft 9.

[0023] The crucible 5 has a circular opening, and the crucible extension 3 is a cylindrical tungsten ring or molybdenum ring, and its radial thickness is 1 / 3 to 2 / 3 of the radial thickness of the crucible 5.

[0024] The crucible extension 3 is installed on the upper edge of the opening of the crucible 5. In order to avoid the high temperature sapphire molten soup sticking to the crucible extension 3 and the crucible 5 during the high-temperature heating process, a circle of molybdenum wire or zirconia fiber should be inserted b...

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Abstract

The invention relates to the field of crystal manufacturing and aims to provide a crucible structure for growing sapphire crystals. The crucible structure comprises a crucible used for growing sapphire crystals; the crucible has a circular opening; the crucible structure further comprises a cylindrical crucible extending section; the crucible extending section is arranged on an upper edge of the opening of the crucible. In the invention, the extending section is additionally arranged on the upper part of the crucible, so that simple mounting of raw materials can be guaranteed; dosing capacityis increased and sapphire in larger size can grow; compared with the crucible main body material, the extending section is lightweight and is capable of relieving the pressure of a crucible support base; a thermal field adopting the extending section structure can be conveniently and quickly mounted and dismounted.

Description

Technical field [0001] The invention relates to the field of crystal manufacturing, in particular to a crucible device for sapphire crystal growth. Background technique [0002] Sapphire is alumina ((α-Al 2 O 3 A single crystal of ), commonly known as corundum, is covalently bonded by three oxygen atoms and two aluminum atoms, and belongs to the hexagonal crystal system. Its melting point is 2050°C. The boiling point is 2980℃, and the maximum working temperature can reach 1900℃. It is an artificial crystal material developed and applied earlier. The chemical properties of sapphire crystal materials are very stable, generally insoluble in water, and not corroded by acids and alkalis; sapphire crystals have high hardness and wear resistance, with Mohs hardness level 9, second only to the hardest diamond, and can be used as bearings for precision machinery Material; Sapphire crystal has good optical and mechanical properties, and is an ideal optical window material; In addition, s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B35/00C30B29/20
CPCC30B29/20C30B35/002
Inventor 宋建军欧阳鹏根张俊付春雷
Owner 内蒙古晶环电子材料有限公司