Method of filling groove structure with tungsten

A metal structure, tungsten layer technology, applied in electrical components, semiconductor/solid state device manufacturing, circuits, etc., can solve the problems affecting the performance of tungsten metal structure, unfavorable filling grooves, etc., to improve filling quality, improve aspect ratio, The effect of increasing the aspect ratio

Active Publication Date: 2019-03-29
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Application Information

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Problems solved by technology

However, in the existing method, tungsten deposition is a kind of conformal deposition growth (conformal growth) that will grow from both the side and bottom surfaces of the groove, that is, the deposition will follow the surface shape of the groove, because in the groove Tungsten growth will also occur on the side of the groove, which is very

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  • Method of filling groove structure with tungsten
  • Method of filling groove structure with tungsten
  • Method of filling groove structure with tungsten

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Embodiment Construction

[0035] Such as figure 1 Shown is the flowchart of the method for filling the groove structure with tungsten in the embodiment of the present invention; as Figure 2A to Figure 2I As shown, it is a device structure diagram in each step of the method of the embodiment of the present invention. The method for filling the groove structure with tungsten in the embodiment of the present invention includes the following steps:

[0036] Step 1, such as Figure 2A As shown, a first groove 101 is formed in the first dielectric layer 1 .

[0037] The depth of the first groove 101 is less than 1 / 3 of the depth of the subsequently formed second groove 102 .

[0038] Step two, such as Figure 2A As shown, a first barrier layer 2 is formed, and the first barrier layer 2 is formed on the bottom surface and side surfaces of the first groove 101 and extends to the surface outside the first groove 101 .

[0039] The first barrier layer 2 is a stacked layer of Ti and TiN.

[0040] Step three...

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Abstract

The invention discloses a method of filling a groove structure with tungsten, which comprises the following steps: S1, forming a first groove in a first dielectric layer; S2, forming a first barrier layer; S3, carrying out a first tungsten deposition and chemical mechanical grinding process to form a first tungsten layer; S4, forming a second dielectric layer; S5, forming a second groove superimposed directly above the first groove; S6, forming a second barrier layer; S7, removing the second barrier layer from the bottom surface of the second groove and the outer surface of the second groove;and S8, carrying out second tungsten deposition from bottom to top to form a second tungsten layer. By using the method of the invention, seamless filling of tungsten can be realized, and the qualityof a tungsten-filled groove structure can be improved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for filling a groove structure with tungsten. Background technique [0002] In semiconductor integrated circuits, contact holes and through holes are usually implemented using tungsten plugs, which are tungsten metal structures formed by filling grooves with tungsten. In the existing process, the method of filling the groove structure with tungsten is to first form the corresponding groove in the corresponding dielectric layer at one time, and the depth of the groove is consistent with the depth of the required contact hole or via hole; after that, A barrier layer is formed on the inner surface of the groove, and then tungsten is deposited in the groove to fill the groove. However, in the existing method, tungsten deposition is a kind of conformal deposition growth (conformal growth) that will grow from both the side and bottom surfaces of...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76877H01L21/76882
Inventor 鲍宇李一斌王晓芳张书强
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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