Deep ultraviolet led chip, deep ultraviolet led epitaxial wafer and preparation method thereof
An LED epitaxial wafer, deep ultraviolet technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of energy band structure change, the influence of deep ultraviolet LED chip luminous efficiency, etc., to achieve the effect of improving luminous efficiency
Active Publication Date: 2020-04-28
GUANGDONG UNIV OF TECH
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However, when growing a P-type layer with a graded Al composition on the AlGaN active region, the change of growth conditions (temperature and time) will cause the Al in the AlGaN active region to migrate, resulting in the Al composition in the active region changes, and the change of the Al composition in the active region will lead to a change in the energy band structure of the active region, which will affect the luminous efficiency of the final deep ultraviolet LED chip prepared
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[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0027] See figure 1 , which shows a flow chart of a method for preparing a deep ultraviolet LED epitaxial wafer provided by an embodiment of the present invention, which may include:
[0028] S11: growing an AlGaN buffer layer on the substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer.
[0029] The substrate is cleaned, and then an AlGaN buffer layer is grown on the substrate, and an N-type AlGaN layer is grown on the AlGaN buffer layer. W...
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Abstract
The invention discloses a deep ultraviolet LED chip, a deep ultraviolet epitaxial wafer and a preparation method of the deep ultraviolet epitaxial wafer. The preparation method comprises the steps of:growing an AlGaN buffer layer on a substrate and growing an N type AlGaN layer on the AlGaN buffer layer; growing an N type AlGaN layer, the Al component of which changes gradually, on the N type AlGaN layer and growing an Al0.5Ga0.5N / Al0.5Ga0.85N active area on the N type AlGaN layer, the Al component of which changes gradually; and growing an AlGaN barrier layer on the Al0.5Ga0.5N / Al0.5Ga0.85Nactive area and growing a P type GaN layer on the AlGaN barrier layer. The growth of the N type AlGaN layer, the Al component of which changes gradually, is before the growth of the active area, an active area energy band structure is not caused to change, so that the light emitting efficiency of the deep ultraviolet LED chip can be improved.
Description
technical field [0001] The invention relates to the field of optoelectronic technology, more specifically, to a deep ultraviolet LED chip, a deep ultraviolet LED epitaxial wafer and a preparation method thereof. Background technique [0002] With the continuous development of semiconductor technology, deep ultraviolet LED (Light Emitting Diode, light emitting diode) has been widely used in the fields of air and water purification, disinfection, ultraviolet medical treatment, high-density optical storage system, full-color display, and solid-state white lighting. Applications. [0003] Considering that the internal quantum efficiency and luminous efficiency of the AlGaN-based deep-ultraviolet LED light source with high Al composition are relatively low, in order to improve the internal quantum efficiency of the AlGaN-based deep-ultraviolet LED chip, at present, when preparing the AlGaN-based deep-ultraviolet LED epitaxial wafer, often suppress For the purpose of the quantum ...
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IPC IPC(8): H01L33/32H01L33/12H01L33/14H01L33/00
CPCH01L33/0075H01L33/12H01L33/14H01L33/325
Inventor 何苗丛海云黄仕华熊德平
Owner GUANGDONG UNIV OF TECH