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Preparation of novel side high-resistance layer special for high-pass ZnO varistor

A varistor and high-resistance layer technology is applied in the field of resistance sheet preparation technology to achieve the effect of stable process and reducing the fluctuation of the thickness of the glaze layer

Inactive Publication Date: 2019-04-26
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The technical problem to be solved in the present invention: in the formulation of the megavolt resistor, through the adjustment of the formula of the high-resistance layer and the control of the process, the shrinkage ratio of the body of the resistor and the glaze layer can be matched, which not only solves the side insulation problem of the resistor , while improving the square wave current capacity of the resistor

Method used

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  • Preparation of novel side high-resistance layer special for high-pass ZnO varistor
  • Preparation of novel side high-resistance layer special for high-pass ZnO varistor

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Select the D5 specification resistor, and configure the high resistance layer in the following way: 35% zinc oxide, 15% bismuth oxide, 6% antimony oxide, 4% manganese oxide, 0.3% boron oxide, 3.5% PVA (polyvinyl alcohol). Ionized water 36.2%. The prepared raw materials are mixed and heated to dissolve to make a uniform solution, and are directly coated on the side of the resistor sheet after the resistor sheet is formed.

[0041] The following is a detailed description of the specific formula-level production process.

[0042] After the zinc oxide valve plate is prepared by raw materials, mixed by ball milling, spray-dried and pressed into shape:

[0043] 1) Sintering

[0044] Use a high-temperature electric furnace to sinter the green body in a closed atmosphere. The specific temperature and control time are as follows:

[0045] From room temperature to 400°C, the heating time is 10~15 hours;

[0046]Keep low temperature debinding at 280°C for 5 hours;

[0047] Co...

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Abstract

The invention discloses a preparation method of a novel side high-resistance layer special for a high-pass ZnO varistor. Prepared raw materials are mixed, heated and dissolved to prepare a uniform solution, and the solution is directly applied to the side of a resistor disc after the resistor disc is formed. The preparation method is characterized by comprising the steps of raw material preparation, ball milling mixing, spray drying, compression molding, sintering, coating and disc forming, wherein the steps of raw material preparation, ball milling mixing, spray drying, compression molding, sintering, coating and disc forming are sequentially executed. The preparation method has the advantages that a high-resistance layer is arranged after formation, so that the fluctuation of glaze layerthickness caused by inconsistent pre-firing shrinkage rate is reduced, and the process is more stable.

Description

technical field [0001] The invention relates to the field of resistor sheet preparation technology, in particular to a new method for a high-resistance layer in the manufacturing process of a nonlinear resistor sheet. Background technique [0002] The ZnO resistor is the core component of the ZnO arrester, so it is a key component that determines the performance of the arrester. In the national standard, the surge arresters whose nominal discharge currents are 5kA and 10kA respectively are required to reach 65kA and 100kA for their ability to withstand two 4 / 10μs high-current shocks. Foreign patent research chooses SiO 2 Fe 2 o 3 System formula, but the ability of D3 and D4 resistors to withstand high current impact can only reach about 60kA and 80kA respectively, which is still a certain distance from the requirements of 65kA and 100kA respectively. Improving the high-current capability of ZnO resistors is a common problem among domestic counterparts. The technical diff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C17/06H01C17/30
CPCH01C17/06H01C17/30
Inventor 何金良孟鹏飞胡军谢清云蒙小记胡小定李刚
Owner TSINGHUA UNIV
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