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Semiconductor device

A semiconductor and barrier layer technology, applied in the field of semiconductor devices with a diode structure, can solve the problem of reducing the effect of suppressing hole injection

Active Publication Date: 2019-04-26
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the carrier density in the barrier region is reduced, the aforementioned effect of suppressing hole injection will be reduced.

Method used

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  • Semiconductor device
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Embodiment Construction

[0017] In one embodiment of the present technology, in the case where the semiconductor substrate has the aforementioned IGBT structure, the barrier region may further have a p-type fourth barrier layer between the third barrier layer and the drift layer. According to this structure, it is possible to reduce the area where the gate faces the drift region via the gate insulating film. As a result, since the parasitic capacitance between the gate and the lower surface electrode is reduced, the IGBT can be turned off (that is, discharge from the gate) in a short time.

[0018] In one embodiment of the present technology, the carrier density of the third barrier layer may be higher than that of the first barrier layer. According to this structure, when the semiconductor device functions as a diode, it is possible to reduce the recovery current while suppressing occurrence of the hysteresis phenomenon. In addition, when the semiconductor device functions as an IGBT, the conductanc...

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Abstract

A semiconductor device may include a semiconductor substrate, an upper electrode and a lower electrode. The semiconductor substrate may include: a p-type anode region being in contact with the upper electrode,an n-type cathode region being in contact with the lower electrode,an n-type drift region interposed between the anode region and the cathode region. The semiconductor substrate may further include a barrier region interposed between the anode region and the drift region,and an n-type pillar region extterminaling between the barrier region and the upper electrode. The barrier region may include a multi-layer structure in which a p-type second barrier layer is interposed between an n-type first barrier layer and an n-type third barrier layer. The first barrier layer may be in contact with the anode region and is connected to the upper electrode via the pillar region.

Description

technical field [0001] The technology disclosed in this specification relates to a semiconductor device, in particular, to a semiconductor device having a diode configuration. Background technique [0002] Japanese Patent Application Laid-Open No. 2016-162897 discloses a semiconductor device having a diode structure. The semiconductor device has a semiconductor substrate, an upper surface electrode provided on an upper surface of the semiconductor substrate, and a lower surface electrode provided on a lower surface of the semiconductor substrate opposite to the upper surface. The semiconductor substrate has a p-type anode region in contact with the upper surface electrode, an n-type cathode region in contact with the lower surface electrode, and an n-type drift region located between the anode region and the cathode region and having a lower carrier density than the cathode region. [0003] The semiconductor device further has an n-type barrier region located between the an...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0684H01L29/7397H01L27/0727H01L29/407H01L29/0834H01L29/1095H01L29/1608H01L29/0603H01L29/861H01L27/0716H01L29/083H01L29/41708H01L29/0804H01L29/0821H01L29/4236
Inventor 平林康弘
Owner DENSO CORP
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