GaN HEMT millimeter wave reconfigurable antenna and preparation method thereof
A technology for reconstructing antennas and millimeter waves, applied to antennas, structural forms of radiation elements, electrical components, etc., can solve the problems of antenna electromagnetic interference, weight increase, and affecting the normal operation of antennas, etc., to achieve simple technology and simple working methods Effect
Active Publication Date: 2019-05-03
北京星英联微波科技有限责任公司
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Problems solved by technology
This increases the weight of the platform and the cost of building the antennas. At the same time, the electromagnetic interference between the antennas is also very large, which seriously affects the normal operation of the antennas.
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[0019] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0020] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0021] Such as Figure...
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The invention discloses a GaN HEMT millimeter wave reconfigurable antenna and a preparation method thereof. The GaN HEMT millimeter wave reconfigurable antenna comprises a substrate, wherein an AlN buffer layer is epitaxially grown on the substrate, a GaN layer is grown on the AlN buffer layer, AlGaN layers which are not in contact in the middle are arranged on the left and right sides of the GaNlayer, the AlGaN layers on the left and right sides are provided with ohmic contact metal electrodes, the lower surfaces of the ohmic contact metal electrodes are in contact with the GaN layer, the upper surfaces of the AlGaN layers and the upper surface of the GaN layer between the two AlGaN layers are provided with metal strips of irregular periodic structure, the metal strips of the irregular periodic structure form a chirped Bragg grating, and the Bragg grating structures on the upper surfaces of the AlGaN layers on the left and right sides are connected by means of a metal layer so as toform an integral gate metal layer. The antenna is reconfigurable, the operating mode is simple, and the manufacturing process is simple.
Description
technical field [0001] The invention relates to the technical field of millimeter wave antennas, in particular to a GaN HEMT millimeter wave reconfigurable antenna and a preparation method thereof. Background technique [0002] With the rapid development of modern radar and communication systems, the number of antennas required by aircraft, ships, satellites, etc. is increasing for the purposes of communication, navigation, guidance, warning, and weapon homing. As a result, the weight of the platform continues to increase, and the cost of building the antennas also continues to rise. At the same time, the electromagnetic interference between the antennas is also very large, which seriously affects the normal operation of the antennas. In order to reduce the weight of the antenna loaded on the platform, reduce the cost, reduce the radar cross section of the platform and achieve good electromagnetic compatibility characteristics, it is hoped that one antenna can realize the fu...
Claims
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Login to View More IPC IPC(8): H01Q1/36H01Q3/00H01Q19/06
CPCY02D30/70
Inventor 胡南谢文青刘建睿赵丽新刘爽袁昌勇
Owner 北京星英联微波科技有限责任公司