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Iron-erbium double-doped laser crystal for 3.0-5.0 micron all-solid laser device

A laser crystal and laser technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of improving laser output efficiency

Active Publication Date: 2019-05-03
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant reports on iron-erbium double-doped crystals as 3.0-5.0 micron mid-infrared laser crystals at home and abroad

Method used

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  • Iron-erbium double-doped laser crystal for 3.0-5.0 micron all-solid laser device
  • Iron-erbium double-doped laser crystal for 3.0-5.0 micron all-solid laser device

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Embodiment 1

[0019] This embodiment discloses a mid-infrared iron-erbium double-doped laser crystal for 3.0-5.0 micron all-solid-state lasers, in which ferrous ions (Fe 2+ ) as an active ion can emit fluorescence at 3.0-5.0 microns; trivalent erbium ion (Er 3 + ) can be used as a sensitizing ion for ferrous ions, such as figure 1 Shown: Under the pumping of a well-developed semiconductor laser (LD), the central wavelength range is: 780-830nm (that is, a semiconductor laser with a pump source of 780-830nm is used), or the central wavelength range is: 920-1020nm (that is, a semiconductor laser with a pump source of 920-1020 nm), Er 3+ Effectively absorb energy, and then, with the assistance of the host material phonon energy, occurs from Er 3+ to Fe 2+ energy transfer, transferring energy to Fe 2+ ions, to achieve Er 3+ The sensitization function of ions makes the crystal suitable for semiconductor laser (LD) pumping.

[0020] In such crystals, ferrous ions (Fe 2+ ) doping concentrat...

Embodiment 2

[0024] Select the raw material PbF that purity is greater than 99.99% in the present embodiment 2 、ErF 3 and FeF 2 , using the crucible drop method for crystal growth, successfully grown iron-erbium co-doped lead fluoride mid-infrared laser crystals, in which ferrous ions (Fe 2+ ) with a doping concentration of 2mol%, trivalent erbium ions (Er 3+ ) with a doping concentration of 2 mol%. After successfully growing the crystal, the processing size is 6×6×1mm 3 Spectrum test was carried out on the sample, under the excitation of 970nm LD, the mid-infrared fluorescence emission spectrum curve of 3.0-5.0 microns was successfully tested, which proved the sensitization effect of erbium ions on iron ions.

[0025] This is the first time in the world that Fe 2+ Direct LD excitation on ion-activated laser crystals produces enhanced fluorescence emission in the 3.0-5.0 micron band, which has important research value and application prospects. At the same time, it also shows that th...

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Abstract

The invention discloses an iron-erbium double-doped laser crystal for a 3.0-5.0 micron all-solid laser device. The iron-erbium double-doped laser crystal relates to the field of mid-infrared laser gain material. In the iron-erbium double-doped laser crystal, divalent iron ions serve as active ions and have a light emitting range in the 3.0-5.0 micron mid-infrared bands, trivalent erbium ions serveas sensitized ions of the divalent iron ions, so that the crystal is suitable for commercial and high-power LED pumping. One the other hand, the divalent iron ions belonging to transition metal ionshave wide absorption and emission bandwidths, have large absorption and emission cross sections, and can achieve output of ultra-short and ultra-fast laser. The laser crystal can be used as 3.0-5.0 micron laser output, and has important application prospects in fields of medical, military, scientific research and the like.

Description

technical field [0001] The invention relates to the technical field of laser crystal gain materials, in particular to a mid-infrared iron-erbium double-doped laser crystal for 3.0-5.0 micron all-solid-state lasers. Background technique [0002] Lasers in the 3.0-5.0 micron band have broad application prospects in civil and military fields such as air pollution monitoring, sensing, medical treatment, ocean detection, engineering control, spectroscopy, remote sensing, lidar, and photoelectric countermeasures. At present, the main ways to realize 3.0-5.0 micron mid-infrared solid-state lasers are: optical parametric oscillation, optical parametric amplification and difference frequency. However, the mid-infrared lasers based on the above methods are difficult to be widely promoted in practical applications due to the disadvantages of complex devices, low efficiency, and instability. [0003] The present invention aims to find solid-state laser materials that can be directly pu...

Claims

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Application Information

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IPC IPC(8): H01S3/16C30B11/00C30B29/12C30B29/46C30B29/24
Inventor 张沛雄陈振强李真朱思祁
Owner JINAN UNIVERSITY