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Cobalt-erbium double-doped laser crystals for 2.6-4.0 micron mid-infrared all-solid-state lasers

A technology of laser crystals and lasers, applied in crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of improving laser output efficiency

Active Publication Date: 2020-05-08
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant reports on cobalt-erbium double-doped crystals as 2.6-4.0 micron mid-infrared laser crystals at home and abroad

Method used

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  • Cobalt-erbium double-doped laser crystals for 2.6-4.0 micron mid-infrared all-solid-state lasers
  • Cobalt-erbium double-doped laser crystals for 2.6-4.0 micron mid-infrared all-solid-state lasers

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Embodiment 1

[0019] This embodiment discloses a mid-infrared cobalt-erbium double-doped laser crystal for 2.6-4.0 micron all-solid-state lasers, wherein the divalent cobalt ion Co 2+ As an active ion, it can emit fluorescence at 2.6-4.0 microns; trivalent erbium ion Er 3+ Can be used as a sensitizing ion for divalent cobalt ions, such as figure 1 Shown: Under the pumping of a well-developed semiconductor laser (LD), the central wavelength range is: 780-830nm (that is, a semiconductor laser with a pump source of 780-830nm is used), or the central wavelength range is: 920-1020nm (that is, a semiconductor laser with a pump source of 920-1020 nm), Er 3+ Effectively absorb energy, and then, with the assistance of the host material phonon energy, occurs from Er 3+ to Co. 2+ energy transfer, transferring energy to Co 2+ ions, to achieve Er 3+ The sensitization function of ions makes the crystal suitable for semiconductor laser (LD) pumping.

[0020] In such crystals, divalent cobalt ions Co...

Embodiment 2

[0024] Select the raw material PbF that purity is greater than 99.99% in the present embodiment 2 、ErF 3 and CoF 2 , using the crucible drop method for crystal growth, successfully grown cobalt-erbium co-doped lead fluoride mid-infrared laser crystals, in which divalent cobalt ions Co 2+ The doping concentration is 1mol%, the trivalent erbium ion Er 3+ The doping concentration is 1mol%. After successfully growing the crystal, the processing size is 5×5×1mm 3 The sample was tested for spectrum. Under the excitation of 970nm semiconductor laser (LD), the mid-infrared fluorescence emission spectrum curve of 2.6-4.0 microns was successfully tested, which proved the sensitization effect of erbium ions on cobalt ions.

[0025] This is the first time in the world that Co. 2+ Direct LD excitation on ion-activated laser crystals produces enhanced fluorescence emission in the 2.6-4.0 micron band, which has important research value and application prospects. At the same time, it al...

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Abstract

The invention discloses a cobalt-erbium double-doped laser crystal for a 2.6-4.0 micron mid-infrared all-solid laser device. The cobalt-erbium double-doped laser crystal relates to the field of mid-infrared laser gain material. In the cobalt-erbium double-doped laser crystal, divalent cobalt ions serve as light emitting ions in 2.6-4.0 micron mid-infrared bands, trivalent erbium ions serve as effective sensitized ions of the divalent cobalt ions, so that the crystal is suitable for high-power and commercial LED pumping, thereby being conducive to the integration and lighting of a laser system.At the same time, the divalent cobalt ions belonging to transition metal ions have wide absorption and emission bandwidths, and are conducive to the output of ultra-short and ultra-fast laser. The laser crystal can be used as an effective gain material for the 2.6-4.0 micron mid-infrared all-solid laser device, and has important application prospects in fields of medical, military, scientific research and the like.

Description

technical field [0001] The invention relates to the technical field of laser crystal gain materials, in particular to a mid-infrared cobalt-erbium double-doped laser crystal for 2.6-4.0 micron all-solid-state lasers. Background technique [0002] The 2.6-4.0 micron band laser has a wide range of applications in civilian fields such as medical treatment, detection, engineering control, spectroscopy, remote sensing, and military fields such as laser radar and photoelectric countermeasures. At present, the main ways to realize 2.6-4.0 micron mid-infrared solid-state lasers are based on indirect forms, such as optical parametric oscillation based on nonlinear crystals, optical parametric amplification and difference frequency. However, the mid-infrared laser based on the above method involves key devices such as fundamental frequency light and nonlinear crystals. The devices are complex, poor in stability, and low in efficiency, so it is difficult to promote them in practical ap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/16C30B29/12C30B29/46C30B29/10C30B11/00
Inventor 张沛雄陈振强李真尹浩朱思祁李安明
Owner JINAN UNIVERSITY