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A kind of semiconductor laser end face cleaving method

A laser and semiconductor technology, applied to the structure of optical resonant cavity, etc., can solve the problems of high cost, low yield, inconvenient operation, etc., and achieve the effect of high yield, low cost of use, and convenient operation

Active Publication Date: 2017-03-01
闫静
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention proposes a semiconductor laser end face cleavage method, which solves the problems of inconvenient operation, high cost and low yield in the prior art

Method used

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  • A kind of semiconductor laser end face cleaving method
  • A kind of semiconductor laser end face cleaving method
  • A kind of semiconductor laser end face cleaving method

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Experimental program
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Effect test

Embodiment 1

[0032] Such as figure 1 and Figure 3-5 Shown, a kind of semiconductor laser end face cleaving method of the present invention comprises:

[0033] 1) Place semiconductor laser epitaxial structure 2 to be cleaved in water glass cleavage environment 4, water glass cleavage environment 4 includes water glass container and water glass 5;

[0034] 2) The semiconductor laser epitaxial structure 2 has multiple groups of scratches 3, and the cleavage operation is performed through the scratches 3 to form a light-emitting end face;

[0035] 3) The cleaved semiconductor laser epitaxial structure 2 is separated from the water glass cleavage environment 4, and water glass 5 is attached to the light-emitting end surface;

[0036] 4) Baking the light-emitting end surface to form a passivation layer 6;

[0037] 5) Coating the light-emitting end surface to form a light-emitting end surface, and the cleavage is completed.

[0038] Wherein the scratches 3 are vertically parallel. The film ...

Embodiment 2

[0040] Such as figure 1 and Figure 3-5 Shown, a kind of semiconductor laser end face cleaving method of the present invention comprises:

[0041] 1) Place semiconductor laser epitaxial structure 2 to be cleaved in water glass cleavage environment 4, water glass cleavage environment 4 includes water glass container and water glass 5, semiconductor laser epitaxial structure 2 to be cleaved is immersed in water glass 5 in;

[0042] 2) The semiconductor laser epitaxial structure 2 has multiple groups of scratches 3, and the cleavage operation is performed through the scratches 3 to form a light-emitting end face;

[0043] 3) The cleaved semiconductor laser epitaxial structure 2 is separated from the water glass cleavage environment 4, and water glass 5 is attached to the light-emitting end surface;

[0044] 4) Baking the light-emitting end surface to form a passivation layer 6;

[0045] 5) Coating the light-emitting end surface to form a light-emitting end surface, and the cl...

Embodiment 3

[0048] Such as figure 1 and Figure 3-5 Shown, a kind of semiconductor laser end face cleaving method of the present invention comprises:

[0049] 1) Place semiconductor laser epitaxial structure 2 to be cleaved in water glass cleavage environment 4, water glass cleavage environment 4 includes water glass container and water glass 5, semiconductor laser epitaxial structure 2 to be cleaved is immersed in water glass 5 in;

[0050] 2) The semiconductor laser epitaxial structure 2 has multiple groups of scratches 3, and the cleavage operation is performed through the scratches 3 to form a light-emitting end face;

[0051] 3) The cleaved semiconductor laser epitaxial structure 2 is separated from the water glass cleavage environment 4, and water glass 5 is attached to the light-emitting end surface;

[0052] 4) Baking the light-emitting end surface to form a passivation layer 6;

[0053] 5) Coating the light-emitting end surface to form a light-emitting end surface, and the cl...

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Abstract

The invention provides a semiconductor laser unit end face cleavage method. The semiconductor laser unit end face cleavage method comprises the steps that a semiconductor laser unit epitaxy structure to be cleaved is arranged in a water glass cleavage environment, wherein the water glass cleavage environment comprises a water glass container and water glass, and the semiconductor laser unit epitaxy structure is provided with multiple groups of scratching cracks; cleavage operation is performed on the scratching cracks to form a light-emitting end face; the cleaved semiconductor laser unit epitaxy structure is separated from the water glass cleavage environment, wherein the water glass attaches to the light-emitting end face; the light-emitting end face is baked to form a passivation layer; film coating is performed on the light-emitting end face to form a light outlet end face, and the cleavage is finished. The semiconductor laser unit end face cleavage method is low in using cost, the device COD level is effectively improved, high laser output efficiency is further obtained, operation is convenient, the rate of finished products is high, and popularization and usage are facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor laser preparation, in particular to a semiconductor laser end face cleaving method. Background technique [0002] The existing semiconductor laser chip preparation process is as follows: 1) Use gallium arsenide or indium phosphide substrate as the base material (i.e. substrate) for epitaxial structure growth, and grow the total thickness of the substrate material by MOCVD or MBE to several A micron fine epitaxial structure is formed to form a semiconductor laser epitaxial wafer; 2) The front electrode structure is obtained by evaporation, sputtering and photolithography on the front of the epitaxial structure; 3) After the substrate is thinned to about 100 μm by grinding , to prepare the back electrode structure; 4) by slicing, the natural cleavage surface of the semiconductor material is used to form the light-emitting end face, and a bar bar (that is, a plurality of semiconductor laser tube cores is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10
Inventor 廉鹏
Owner 闫静