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Cobalt-erbium double-doped laser crystal for 2.6-4.0 micron mid-infrared all-solid laser device

A laser crystal and laser technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of improving laser output efficiency

Active Publication Date: 2019-05-03
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are no relevant reports on cobalt-erbium double-doped crystals as 2.6-4.0 micron mid-infrared laser crystals at home and abroad

Method used

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  • Cobalt-erbium double-doped laser crystal for 2.6-4.0 micron mid-infrared all-solid laser device
  • Cobalt-erbium double-doped laser crystal for 2.6-4.0 micron mid-infrared all-solid laser device

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Embodiment 1

[0019] This embodiment discloses a mid-infrared cobalt-erbium double-doped laser crystal for a 2.6-4.0 micron all-solid-state laser, in which the divalent cobalt ion Co 2+ As an activating ion, it can emit fluorescence of 2.6-4.0 microns; the trivalent erbium ion Er 3+ Can be used as a sensitizing ion of divalent cobalt ion, such as figure 1 Shown: Under the well-developed semiconductor laser (LD) pump, the center wavelength range is: 780~830nm (that is, the semiconductor laser with the pump source is 780~830 nm), or the center wavelength range is 920~1020nm (That is, a semiconductor laser with a pump source of 920 to 1020 nanometers is used), Er 3+ Effectively absorb energy, and then, with the aid of the phonon energy of the host material, from Er 3+ To Co 2+ Transfer of energy to Co 2+ Ion, realize Er 3+ The sensitization function of ions makes the crystal suitable for semiconductor laser (LD) pumping.

[0020] In this type of crystal, the divalent cobalt ion Co 2+ The doping co...

Embodiment 2

[0024] In this embodiment, the raw material PbF with a purity greater than 99.99% is selected 2 , ErF 3 And CoF 2 , Using the crucible descending method for crystal growth, successfully grown the cobalt-erbium co-doped lead fluoride mid-infrared laser crystal, in which the divalent cobalt ion Co 2+ The doping concentration is 1mol%, the trivalent erbium ion Er 3+ The doping concentration is 1 mol%. After the crystal is successfully grown, the processing size is 5×5×1mm 3 Spectral test of the sample of 970nm semiconductor laser (LD), successfully tested the 2.6-4.0 micron mid-infrared fluorescence emission spectrum curve, which proved the sensitization effect of erbium ion on cobalt ion.

[0025] This is the first time that Co 2+ Direct LD excitation on ion-activated laser crystals produces enhanced fluorescence emission in the 2.6-4.0 micron band, which has important research value and application prospects. It also shows that the new mid-infrared laser crystal co-doped with cobal...

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Abstract

The invention discloses a cobalt-erbium double-doped laser crystal for a 2.6-4.0 micron mid-infrared all-solid laser device. The cobalt-erbium double-doped laser crystal relates to the field of mid-infrared laser gain material. In the cobalt-erbium double-doped laser crystal, divalent cobalt ions serve as light emitting ions in 2.6-4.0 micron mid-infrared bands, trivalent erbium ions serve as effective sensitized ions of the divalent cobalt ions, so that the crystal is suitable for high-power and commercial LED pumping, thereby being conducive to the integration and lighting of a laser system.At the same time, the divalent cobalt ions belonging to transition metal ions have wide absorption and emission bandwidths, and are conducive to the output of ultra-short and ultra-fast laser. The laser crystal can be used as an effective gain material for the 2.6-4.0 micron mid-infrared all-solid laser device, and has important application prospects in fields of medical, military, scientific research and the like.

Description

Technical field [0001] The invention relates to the technical field of laser crystal gain materials, in particular to a mid-infrared cobalt-erbium double-doped laser crystal for 2.6-4.0 micron all-solid-state lasers. Background technique [0002] Lasers in the 2.6-4.0 micron band have a wide range of applications in medical, detection, engineering control, spectroscopy, remote sensing, and other civil and military applications such as lidar and optoelectronic countermeasures. At present, the main ways to achieve 2.6-4.0 micron mid-infrared solid-state lasers are based on indirect forms, such as: optical parametric oscillation based on nonlinear crystals, optical parametric amplification and difference frequency. However, the mid-infrared lasers based on the above methods involve key devices such as fundamental frequency light and nonlinear crystals. The devices are complex, have poor stability and low efficiency, and are difficult to promote in practical applications. [0003] The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16C30B29/12C30B29/46C30B29/10C30B11/00
Inventor 张沛雄陈振强李真尹浩朱思祁李安明
Owner JINAN UNIVERSITY