Array substrate, thin film transistor and manufacturing method thereof
A technology of thin-film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of on-state current limitation, thick wire thickness, etc., and achieve the effect of increasing the on-state current and improving charging efficiency
Active Publication Date: 2020-04-07
BOE TECH GRP CO LTD
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Problems solved by technology
[0003] The OLED light-emitting area is a current-driven light-emitting device, which requires a large driving current during normal operation. In order to achieve a higher resolution TFT above 8K, it needs to achieve higher charging efficiency, increase the on-state current, and the thickness of the wire needs to be thicker. However, the current top-gate thin film transistors have certain limitations on the on-state current.
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[0050]Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
[0051] Embodiments of the present disclosure provide a thin film transistor, such as figure 1 with figure 2 As shown, it includes a first active layer 13 , an insulating layer 14 , a source 16 , a drain 15 , a second active layer 17 , a gate insulating layer 18 and a gate 19 .
[0052] Wherein, the first active layer 13 is disposed on the substrate 11, and the insulating layer 14 is disposed on the surface of the first activ...
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The invention relates to an array substrate, a thin film transistor and a manufacturing method of the thin film transistor. The thin film transistor comprises a first active layer, an insulation layer, a source and a drain, wherein the first active layer is arranged at one side of a substrate, the insulation layer is arranged on a surface, far away from the substrate, of the first active layer, the insulation layer completely or partially covers the first active layer, the source and the drain are arranged on a surface, far away from the first active layer, of the insulation layer if the firstactive layer is completely covered by the insulation layer, the source and the drain are arranged on a surface, far away from the substrate, of the insulation layer if the first active layer is partially covered by the insulation layer, or the source and the drain are arranged on the surface, far away from the substrate, of the first active layer, the second active layer is arranged at one side,far away from the substrate, of the insulation layer and extends to be contacted with the source and the drain, and the positive projection of the second active layer on the substrate and the positiveprojection of the first active layer on the substrate have an overlapped region.
Description
technical field [0001] The present disclosure relates to the field of display technology, and in particular, to an array substrate, a thin film transistor, and a method for manufacturing the thin film transistor. Background technique [0002] With the development of display technology, people have higher and higher requirements on the performance of the display panel. Large-size, high-resolution display panels have gradually become a new growth hotspot for TVs, such as OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) display panels. A display panel usually includes a thin film transistor, and the thin film transistor includes a top gate type and a bottom gate type. Among them, the top-gate type has higher Ion, higher aperture ratio and better TFT (Thin Film Transistor, thin film transistor) stability than the bottom-gate type, and has attracted attention. [0003] The OLED light-emitting area is a current-driven light-emitting device, which requires a larg...
Claims
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IPC IPC(8): H01L29/786H01L21/336H01L29/06H01L27/12
Inventor 丁录科方金钢王庆贺
Owner BOE TECH GRP CO LTD