Manufacturing method of light-emitting diode micro-crystal grains

Abstract

The invention relates to a manufacturing method of light-emitting diode micro-crystal grains. The method comprises the following steps of providing a substrate, wherein a buffer layer is formed on thesubstrate, and a laser blocking layer is formed on the surface of the buffer layer; forming array-arranged light-emitting diode micro-crystal grains on the laser blocking layer; providing an auxiliary substrate, and forming an adhesive layer on the auxiliary substrate; enabling the surface, having the adhesive layer, of the auxiliary substrate to be pressed to the light-emitting diode micro-crystal grains, wherein the gaps between the light-emitting diode micro-crystal grains are filled with the adhesive layer, and the adhesive layer is cured; performing irradiating on the substrate from thebottom surface of the substrate to enable the buffer layer to be gasified, wherein the substrate is separated from the laser blocking layer; performing etching on the substrate to remove the substrate; and performing dispergation on the adhesive layer so as to obtain a plurality of light-emitting diode micro-crystal grains.

Description

technical field [0001] The invention relates to an integrated circuit device manufacturing device, in particular to a method for manufacturing light-emitting diode microcrystal grains. Background technique [0002] Nowadays, in order to meet the needs of various high-density packaging, the semiconductor packaging industry has gradually developed various types of packaging designs. The semiconductor chips used for packaging come from wafers manufactured by fabs. The wafers have a semiconductor substrate And there are arrays of microcrystalline grains formed on its surface. [0003] In the prior art, before the good product die / chip is separated from the semiconductor substrate, it is necessary to ablate the bad die on the substrate (laser ablation). Due to the control and uniformity of the laser power, the die / chip The etching efficiency of the epitaxial layer is different, which may cause the problem that the ablation of the grain is not deep and remains or the ablation of ...

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Problems solved by technology

[0003] In the prior art, before the good product die / chip is separated from the semiconductor substrate, it is necessary to ablate the bad die on the substrate (laser ablation). Due to the control and uniformity of the laser power, the die / chip The etching efficiency of the epitaxial layer is different, which will cause the problem that the grain ablation is not deep and remains or the grain ablation is too deep

In the flip chip process, an auxiliary substrate is used to assist the separation of the die, that is, the substrate formed with an adhesive layer is pressed on the surface of the die, and the laser is used to irradiate the semiconductor substrate, so that the laser will pass through When the semiconductor substrate reaches the adhesive layer, the position where the laser beam reaches the residual grain, the position where the ablation is too deep, and the gap between the good product grains; the adhesive layer is coked due to the laser energy, causing the adhesive layer and the semiconductor Difficult to separate, resulting in difficulty in peeling off good-quality grains and semiconductor substrates

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