A method for preparing perovskite solar cells by applying air knife coating
A perovskite-type, composite perovskite technology, applied in the device, coating, circuit and other directions of coating liquid on the surface, can solve the problem of restricting large-area device components, and achieve great application value, convenient operation, and operation. simple effect
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Embodiment 1
[0063] Embodiment 1: Use the method of the present invention to prepare high-quality perovskite film
[0064] Choose PbI 2 And iodomethylamine is the precursor raw material of perovskite-type materials. It is dissolved in a mixed solvent of DMSO and DMF with a volume ratio of 1:4 at a molar ratio of 1mmol: 1mmol, and is configured to obtain a 45wt% precursor solution. The solution was spread on the substrate to obtain a light yellow transparent liquid film, and then an air knife was used to input a nitrogen pressure of 0.3 MPa to complete the process of uniform coating and drying of the liquid film to obtain a light brown transparent film.
[0065] The obtained perovskite precursor film was placed on a hot stage at 100° C. for 10 minutes and annealed to obtain a black-brown uniform perovskite layer film of the present invention.
[0066] figure 1 A schematic diagram of a simple process flow for preparing high-quality perovskite films using the method of the present invention...
Embodiment 2
[0068] Embodiment 2: Using the method of the present invention to prepare high-quality electron transport material thin films
[0069] Choose SnO 2 As a hole transport material, configure SnO with a mass concentration of 5% 2 Colloidal aqueous solution. The solution is spread on the substrate, and the substrate is a clean commercial transparent conductive substrate ITO to obtain a transparent liquid film, and then an air knife is used to input a nitrogen pressure of 0.4 MPa to complete the process of uniform coating and drying of the liquid film. Subsequently, the substrate was transferred to a hot stage at 150° C. for annealing for 10 minutes to obtain the electron transport material thin film of the present invention.
Embodiment 3
[0070] Embodiment 3: Using the method of the present invention to prepare high-quality hole transport material thin films
[0071] Choose spiro-OMeTAD as the hole transport material, dissolve it in chlorobenzene, and use 4-tert-butylpyridine and lithium bistrifluoromethanesulfonimide as additives to configure holes with a molar concentration of 0.06mol / L Transfer material solution. The solution was spread on the substrate to obtain a light yellow transparent liquid film, and then an air knife was used to input a nitrogen gas pressure of 0.4 MPa to complete the process of uniform coating and drying of the liquid film to obtain a hole transport material film.
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