GaN HEMT drain electrode control circuit and equipment

Abstract

The invention relates to a GaN HEMT drain electrode control circuit and equipment. The GaN HEMT drain electrode control circuit comprises a drain voltage switch driving circuit and a first N-type MOStube. The first input end of the leakage voltage switch driving circuit is used for connecting an external power supply, a second input end is used for connecting a leakage voltage control signal, a first output end is connected with a grid electrode of the first N-type MOS transistor, a second output end is connected with a drain electrode of the first N-type MOS transistor, and a third output end is connected with a source electrode of the first N-type MOS transistor; the source electrode of the first N-type MOS tube is used for being connected with the drain electrode of the GaN HEMT. Basedon the structure, the leakage voltage switch driving circuit receives a leakage voltage control signal, outputs a driving signal to the grid electrode of the first N-type MOS transistor, and controlsthe on-off of the drain electrode and the source electrode of the first N-type MOS transistor; on and off of GaN HEMT leakage voltage are controlled through the first N-type MOS tube, high-speed switching of a leakage voltage switch can be achieved, meanwhile, the loss of a drain electrode power switch and the circuit cost can be reduced, and the reliability and efficiency of a circuit are improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor control circuits, in particular to a GaN HEMT drain control circuit and equipment. Background technique [0002] Gallium nitride (GaN) semiconductor material has the advantages of wide bandgap, high electron drift velocity, high breakdown field strength, and stable chemical properties. It is an ideal material for preparing high-frequency and high-power devices. High Electron Mobility Transistor (HEMT, High Electron Mobility Transistor) based on GaN has the advantages of high output power density, high operating voltage and high output impedance, and is playing an increasingly important role in wireless communication. The core device of the communication amplifier. [0003] In the process of implementation, the inventors found at least the following problems in the conventional technology: the drain switching loss of the GaN HEMT drain control circuit is large, and the circuit reli...

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Problems solved by technology

[0004] Based on this, it is necessary to provide a GaN HEMT drain control circuit and equipment for the problems of large leakage switching loss and low circuit reliability of the GaN HEMT drain control circuit

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