WAT test device, preparation method and test method for detecting metal connection uplift

Abstract

The invention discloses a WAT test device for detecting metal connecting line hillocks, a preparation method and a test method. The WAT test device for detecting metal connecting line hillocks includes a front metal layer and a rear metal layer. The front metal layer has at least one metal line of a predetermined line width. An interlayer dielectric layer is disposed between the front metal layerand the rear metal layers. The metal line of the predetermined line width of the front metal layer is electrically connected to a first test pad. The rear metal layer is electrically connected to a second test pad. The WAT test device for detecting metal connecting line hillocks can monitor the dependence of the metal connecting line hillocks on metal line width, and obtains a key metal line widthto provide a basis for a layout rule. In addition, the WAT test device for detecting metal connecting line hillocks can also monitor the reliability of the interlayer dielectric layer, such as TDDB.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a WAT ​​test device, a preparation method and a test method for detecting metal connection bumps. Background technique [0002] As the product process continues to shrink, the thickness of the back-end Inter Metal Dielectric (IMD) will continue to decrease. When the thickness of the medium is comparable to the height of the metal bump (Hillock) defect, the inter-layer dielectric planarization process (IMD) CMP) will inevitably grind and penetrate the interlayer dielectric layer and contact the bump (Hillock) defect of the front layer metal, which will cause a series of process problems, such as the grinding liquid (CMP Slurry) corrodes the front layer metal to form a void (Metal Void ), and subsequent metal deposition, such as through-hole titanium, through-hole titanium nitride, through-hole tungsten, etc., enter the cavity, thereby causing a short circuit be...

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Problems solved by technology

[0005] The first purpose of the present invention is aimed at the prior art, when the thickness of the dielectric is comparable to the height of the metal bump (Hillock) defect, the interlayer dielectric planarization process (IMD CMP) will inevitably grind the interlayer dielectric layer through and contact The bump (Hillock) defect to the front layer metal will cause a series of process problems and other defects. Provide a WAT ​​test device for detecting metal wiring bumps

[0006] The second object of the present invention is aimed at the prior art, when the thickness of the medium is comparable to the height of the metal bump (Hillock) defect, the interlayer dielectric planarization process (IMD CMP) is bound to grind and penetrate the interlayer dielectric layer and contact The bump (Hillock) defect to the front layer metal will cause a series of process problems and other defects. Provide a test method for the WAT test device used to detect the bump of the metal connection.

[0007] The third object of the present invention is aimed at the prior art, when the thickness of the dielectric is comparable to the height of the metal bump (Hillock) defect, the interlayer dielectric planarization process (IMD CMP) will inevitably grind the interlayer dielectric layer through and contact To the front-layer metal bump (Hillock) defect, which will cause a series of process problems and other defects Provide a method for preparing a WAT ​​test device for detecting metal wiring bumps

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