Power semiconductor module

Abstract

The invention discloses a power semiconductor module. The power semiconductor module comprises a plurality of power semiconductor units arranged side by side; each of the power semiconductor units areencapsulated in a tube shell and are elastically supported through elastic units in the tube shell; each of the power semiconductor units are arranged independently and are disposed between a first metal electrode and a second metal electrode; the first metal electrode is electrically connected to each of the power semiconductor units; and the first metal electrode and the second metal electrodeare electrically connected to an external circuit. The power semiconductor units in the power semiconductor module of the present invention are independently arranged; when a certain power semiconductor unit fails, the failed power semiconductor unit can be replaced by another normal power semiconductor unit; and therefore, chip sub-modules can be fully utilized, and the utilization rate of the chip sub-modules can be improved, and the replacement costs of the chip sub-modules can be reduced.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a power semiconductor module. Background technique [0002] Power semiconductor modules are the core devices in power electronic devices. Power semiconductor modules are mainly composed of Insulated Gate Bipolar Transistor (IGBT) devices. IGBT devices combine the advantages of MOSFET device voltage drive and BJT device bipolar output. It has the advantages of simple control, high voltage and high current, high frequency and low loss. Therefore, power semiconductor devices composed of IGBT devices have been widely used in large-capacity applications such as rail transit and flexible direct current transmission, and have good market prospects. [0003] At present, since power semiconductor modules are often composed of multiple parallel chip sub-modules, in order to facilitate centralized management of multiple parallel chip sub-modules, traditional power semic...

AI Technical Summary

Problems solved by technology

[0003] At present, since power semiconductor modules are often composed of multiple parallel chip sub-modules, in order to facilitate centralized management of multiple parallel chip sub-modules, traditional power semiconductor modules group these multiple parallel chip sub-modules , the chip sub-modules of each group are respectively installed on the same substrate, and the conductive electrodes of the same group of chip sub-modules are electrically connected through common contact points. Obviously, when the same group of chip sub-modules fails, the The other chip sub-modules in the group cannot continue to work. Obviously, this will greatly reduce the utilization rate of each chip sub-module, which will further increase the design cost of the power semiconductor module.

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