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Forming method of split-gate flash memory and split-gate flash memory

A memory and flash technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problem of poor data retention of split-gate flash memory, reduce the probability of escape, and improve data retention.

Inactive Publication Date: 2019-05-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

[0004] The object of the present invention is to provide a method for manufacturing a split-gate flash memory and a split-gate flash memory, so as to solve the problem of poor data retention capability of the split-gate flash memory

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  • Forming method of split-gate flash memory and split-gate flash memory
  • Forming method of split-gate flash memory and split-gate flash memory
  • Forming method of split-gate flash memory and split-gate flash memory

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Embodiment Construction

[0035] The method for forming the split-gate flash memory and the split-gate flash memory proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will be apparent from the following description and claims. It should be noted that the drawings are all in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a portion of the actual structure. In particular, each drawing needs to display different emphases, and sometimes adopts different scales.

[0036] The present invention provides a method for forming a split-gate flash memory, referring to figure 1 , figure 1 It is a flow chart of the manufacturing method steps of the split-gate flash memory according to t...

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Abstract

The invention provides a manufacturing method of a split-gate flash memory, and the split-gate flash memory. The split-gate flash memory comprises a substrate, a substrate oxide layer, a functional layer, a first side wall structure, a shared word line and a second side wall structure. Wherein the functional layer comprises a floating gate layer; compensating ions are doped into the floating gatelayer from the exposed surface of the floating gate layer; the floating gate layer contains original ions; the original ions and the compensating ions form a voltage barrier in the floating gate layerclose to the second side wall structure; the voltage barrier enables a built-in electric field to be formed in the split-gate flash memory, the existence of the built-in electric field can effectively prevent electrons from moving towards the outer side wall structure, and the probability that the electrons escape from the outer side wall structure is greatly reduced, so that the data retention capability of the split-gate flash memory of the shared word line is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a split-gate flash memory and the split-gate flash memory. Background technique [0002] In the development of existing memory, split-gate flash memory has become an important non-volatile memory, and data retention capability is an important parameter of memory quality. The split-gate flash memory sharing the word line is a kind of split-gate flash memory. The split-gate flash memory sharing the word line uses the floating gate layer as the storage unit, and its data retention capacity and the side adjacent to the floating gate layer The thickness of the wall structure is closely related. [0003] At present, because the sidewall structure also affects other performances of the logic CMOS part, the thickness of the sidewall structure of the split-gate flash memory sharing the word line is generally thinner, which will bring the data of the split-gate...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/788
Inventor 曹启鹏王卉陈宏曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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