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Back-surface-incident type light-receiving element and optical module

A light-receiving element and back-incidence technology, applied to electrical components, photometry using electric radiation detectors, semiconductor devices, etc., can solve problems such as increased high-frequency reflection points and reduced receiving sensitivity

Active Publication Date: 2019-06-04
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the number of high-frequency reflection points increases, which becomes a cause of resonance and reduces reception sensitivity.

Method used

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  • Back-surface-incident type light-receiving element and optical module
  • Back-surface-incident type light-receiving element and optical module
  • Back-surface-incident type light-receiving element and optical module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] figure 1 It is a cross-sectional view showing the back-illuminated light-receiving element according to Embodiment 1 of the present invention. The substrate 1 is a semi-insulating InP substrate having a surface and a back surface opposite to the surface. On the surface of the substrate 1 are sequentially stacked an n-type layer 2 , a multiplication layer 3 of AlInAs, a p-type electric field control layer 4 of InP, a light absorption layer 5 of InGaAs, and a window layer 6 of InP. A p-type region 7 is formed in a part of the window layer 6 . Anode electrode 8 is formed on p-type region 7 and connected to p-type region 7 .

[0024] An anode pad 9 and a cathode pad 10 are formed on the back surface of the substrate 1 . A first connection hole 11 and a second connection hole 12 penetrating the substrate 1 are formed by etching. The third connection hole 13 penetrating from the window layer 6 to the n-type layer 2 is formed by etching so that at least a part thereof is c...

Embodiment approach 2

[0031] Figure 5 It is a cross-sectional view showing a back-illuminated light-receiving element according to Embodiment 2 of the present invention. The n-type layer is etched from the light absorbing layer, and filled with the semi-insulating layer 32 containing Fe-InP or Ru-InP. The third connection hole 13 is formed in the semi-insulating layer 32 . Thereby, the distance between the anode wiring 15 and the semiconductor layer is increased, so that the reliability is improved. Other configurations and effects are the same as those in Embodiment 1.

Embodiment approach 3

[0033] Image 6 It is a cross-sectional view showing a back-illuminated light-receiving element according to Embodiment 3 of the present invention. Interposed between the n-type layer 2 and the multiplication layer 3 is an etch stop layer 33 instead of InP. Selective etching can be performed when etching from the substrate side to form the second connection hole 12 and when etching from the epitaxial surface side to form the third connection hole 13 . Therefore, the second connection hole 12 and the third connection hole 13 can be easily formed. Other configurations and effects are the same as those in Embodiment 1.

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Abstract

A substrate (1) has a front surface and a back surface opposite to the front surface. An n-type layer (2), a multiplication layer (3), a p-type electric field control layer (4), a light absorption layer (5), and a window layer (6) are stacked in order on the front surface of the substrate (1). A p-type region (7) is formed in a part of the window layer (6). An anode electrode (8) is formed on thep-type region (7) so as to be connected to the p-type region (7). An anode pad (9) and a cathode pad (10) are formed on the back surface of the substrate (1). First and second connecting holes (11, 12) extend in the substrate (1). A third connecting hole (13) extends through the n-type layer (2) from the window layer (6). The cathode pad (10) is electrically connected to the n-type layer (2) via the first connecting hole (11). The anode pad (9) is electrically connected to the anode electrode 8 via the second and third connecting holes (12, 13). The substrate (1) has a light receiving region (16) on the back surface.

Description

technical field [0001] The present invention relates to a back-illuminated light-receiving element and an optical module used in optical fiber communication and the like. Background technique [0002] The structure of the semiconductor light-receiving element is roughly divided into: the surface incident type in which light is incident from the surface side of the epitaxial growth layer on the semiconductor substrate, the end surface incident type in which light is incident from the side surface of the epitaxial growth layer, and the back side of the semiconductor substrate. Back-incidence type for side-incidence light. [0003] Generally, semiconductor light-receiving elements can obtain light-receiving sensitivity only in the pn junction region, and the large size of the pn junction region makes it easy to align light, and has excellent mountability. On the other hand, if the pn junction region becomes larger, the element capacitance increases and the time constant become...

Claims

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Application Information

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IPC IPC(8): H01L31/10
CPCH01L31/1075H01L31/0203H01L31/03046G01J1/44H01L31/022408H01L31/109H01L31/10
Inventor 竹村亮太大畠伸夫笹畑圭史山路和树
Owner MITSUBISHI ELECTRIC CORP
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