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High frequency amplifier

A technology of high-frequency amplifiers and wires, applied in the direction of radio frequency amplifiers, amplifiers, amplifier types, etc., can solve the problem of small effect of parasitic capacitance and achieve the effect of suppressing radiation noise

Active Publication Date: 2019-06-07
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the former structure, the effect of reducing parasitic capacitance is small

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0033] figure 1 and figure 2 It is a perspective view through the inside of the high-frequency amplifier according to Embodiment 1 of the present invention. image 3 is along figure 1 Sectional view of I-II.

[0034] A transistor 2 is formed on the surface of the semiconductor substrate 1 . The gate electrode 3 of the transistor 2 and the lead frame 4 are connected by a gate wire 5 . The drain electrode 6 of the transistor 2 and the lead frame 7 are connected by a drain wire 8 . The source electrode 9 of the transistor 2 is connected to source wirings 10 and 11 . The source wiring 10 and the lead frames 12 and 13 are connected by source wires 14 and 15, respectively. The source wiring 11 and the lead frames 16 and 17 are connected by source wires 18 and 19, respectively.

[0035] Source wirings 10 and 11 are formed on the surface of semiconductor substrate 1 so as to sandwich transistor 2 . A plurality of wires 20 pass above the transistor 2 and are connected to the s...

Embodiment approach 2

[0043] Figure 14 It is a perspective view showing the inside of the high-frequency amplifier according to Embodiment 2 of the present invention. Figure 15 It is a sectional view showing the inside of the high-frequency amplifier according to Embodiment 2 of the present invention. The sealing material 21 and the like are omitted from illustration.

[0044] In this embodiment, instead of the plurality of lead wires 20 in Embodiment 1, a plurality of first lead wires 20a and a plurality of second lead wires 20b arranged thereon are used. The separation distance d between the plurality of first conducting wires 20a and the plurality of second conducting wires 20b is a distance not to contact them, and is smaller than or equal to the particle size c of the filler 21a.

[0045] The plurality of second conducting wires 20 b is arranged in the gaps between the plurality of first conducting wires 20 a when viewed from a plan view in a direction perpendicular to the surface of the s...

Embodiment approach 3

[0047] Figure 16 , 17 It is a perspective view showing the inside of the high-frequency amplifier according to Embodiment 3 of the present invention. Figure 18 It is a cross-sectional view showing the inside of a high-frequency amplifier according to Embodiment 3 of the present invention. Figure 17 A plurality of wires 20 are omitted. The sealing material 21 and the like are omitted from illustration.

[0048] Ground wirings 23 and 24 independent from the source electrode 9 of the transistor 2 are provided. The ground wirings 23 and 24 are arranged on the outside of the source electrode 9 and are not in contact with the source electrode 9 . A plurality of wires 20 pass above the transistor 2 and are connected to ground lines 23 and 24 . The ground wiring 23 is connected to the lead frames 27 and 28 via wires 25 and 26, respectively. The ground wiring 24 is connected to lead frames 31 , 32 via wires 29 , 30 , respectively.

[0049] The plurality of wires 20 are arrang...

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PUM

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Abstract

A transistor (2) is formed on a surface of a semiconductor substrate (1). First and second wiring lines (10, 11) are formed on the surface of the semiconductor substrate 1 such that the wiring lines sandwich the transistor (2). A plurality of wires (20) are connected to the first and second wiring lines (10, 11) by passing above the transistor (2). A sealing material (21) seals the transistor (2),the first and second wiring lines (10, 11), and the wires (20). The sealing material (21) contains a filler (21a). The distance between the wires (20) is smaller than the grain diameter of the filler(21a). A hollow (22) where the sealing material (21) has not entered between the wires (20) and the transistor (2) is formed.

Description

technical field [0001] The present invention relates to a high frequency amplifier with wire wiring. Background technique [0002] In a high-frequency amplifier, it is necessary to reduce the stray capacitance generated between the drain and gate of the FET. Therefore, a configuration is adopted in which the upper part of the FET is made a cavity by using a metal frame and a metal cover. In addition, a structure is also employed in which a resin with a low dielectric constant is applied to the upper part of the FET to reduce parasitic capacitance. However, compared with the former structure, the effect of reducing parasitic capacitance is small. In addition, the structure of the former metal cover has a shielding effect, and also has the effect of suppressing the radiation noise of the FET. [0003] In addition, it is disclosed that stray capacitance between the gate and the drain is reduced by providing a wire between the gate and the drain by utilizing a shielding effec...

Claims

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Application Information

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IPC IPC(8): H01L23/28H03F3/193H01L23/00H01L23/12
CPCH01L23/12H01L2224/4813H01L2224/48091H03F3/195H03F2200/451H01L23/4821H01L23/3121H01L23/295H01L24/49H01L23/66H01L2924/1424H01L2924/142H01L2924/181H01L2924/186H01L2224/48247H01L2224/49176H01L2224/49177H01L2224/45015H01L2224/49052H01L2224/49095H01L2224/49175H01L24/48H01L23/552H01L2223/6644H01L2924/00014H01L2924/20752H01L2924/00012H01L21/56H01L23/49541H01L2223/6611H01L2224/48175H01L2924/13064H01L2924/30105H03F1/26H03F3/193
Inventor 松井敏夫
Owner MITSUBISHI ELECTRIC CORP