Computational lithography method and system for optical proximity effect correction

A technology of optical proximity effect and computational lithography, which is applied in the field of lithography technology and can solve problems such as increasing time costs

Active Publication Date: 2019-06-25
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This means that existing computational lithography methods require time to iteratively recheck the optical proximity correction and hot spot correction steps, increasing the time cost

Method used

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  • Computational lithography method and system for optical proximity effect correction
  • Computational lithography method and system for optical proximity effect correction
  • Computational lithography method and system for optical proximity effect correction

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Embodiment Construction

[0050] In the following, only some exemplary embodiments are briefly described. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and descriptions are to be regarded as illustrative in nature and not restrictive. Furthermore, the present disclosure may repeat reference numerals and / or reference letters in different instances, such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed.

[0051] In state-of-the-art computational lithography methods, such as figure 1 As shown, there are many iterations between the verification of the optical proximity correction and the correction of the hot spot before the requirement is met.

[0052]The basic idea of ​​the embodiments of the present invention is to divide the input layout d...

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Abstract

The invention provides a computational lithography method for optical proximity effect correction. The computational lithography method comprises the following steps: an input layout design document is decomposed into a first layout part and a second layout part according to the value of the process factor, wherein the process factor of the first layout part is lower than a preset threshold, and the process factor of the second layout part is higher than a preset threshold; the first layout part and the second layout part are processed separately; and the processed first layout part and the processed second layout part are matched and combined. Because the first layout part and the second layout part are processed separately, the processing quality is improved, there is no need to iteratively execute the optical proximity correction inspection step and the hot spot correction step, and the output speed of layout design documents is improved. The invention also provides a computationallithography system for optical proximity effect correction.

Description

technical field [0001] The invention relates to a photolithography technology in semiconductor manufacturing, in particular to a calculation photolithography method and system for optical proximity effect correction. Background technique [0002] With the development of semiconductor manufacturing, the integration level is getting higher and higher, and the number of transistors contained in a unit area is also increasing rapidly. The main index to measure the degree of integration in the manufacturing process is the resolution of the photolithography process, which is used to distinguish the ability of feature patterns adjacent to the surface of the silicon wafer. [0003] As we all know, k1=NA*p / 2λ, where k1 is a process factor or resolution constant; NA (Numerical Aperture), the numerical aperture of the optical system of the lithography machine, represents the ability of the lens to collect diffracted light (concentration), NA= n*sinθ=n*(lens radius / lens focal length), ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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