Plasma treatment device
A processing device, plasma technology, applied to valve devices, valve operation/release devices, mechanical equipment, etc., can solve problems such as insufficient, soft interlock error prevention functions, etc.
Active Publication Date: 2021-12-17
HITACHI HIGH-TECH CORP
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Problems solved by technology
However, in many cases, the soft interlock (soft interlock) is not sufficient as an error prevention function, so another measure is required in addition to the electrical interlock (soft interlock).
Method used
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Embodiment Construction
[0054] In the plasma processing apparatus according to this embodiment, in order to generate plasma in the processing chamber disposed inside the vacuum vessel, the electric field of microwaves is used as the electric field supplied to the processing chamber to excite atoms or molecules of the processing gas supplied into the processing chamber. Particles, making them plasma. Then, a film structure including a mask and a film layer to be processed that has been previously formed on the upper surface of a substrate-like sample such as a semiconductor wafer disposed in the processing chamber is etched.
[0055] In particular, there is a so-called microwave ECR type plasma etching processing device. In such a microwave ECR type plasma etching processing device, a magnetic field is formed in the processing chamber together with an electric field. Resonance (Electron Cyclotron Resonance: ECR) is used to generate plasma by interacting electric and magnetic fields.
[0056] illustra...
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The present invention provides a plasma processing apparatus capable of stably supplying processing gas and precursor gas to a processing chamber. The plasma processing apparatus of the present invention includes: a processing chamber for performing plasma processing on a sample; a high-frequency power supply for supplying high-frequency power for generating plasma; a sample table for placing the sample; and a gas for supplying gas to the processing chamber. A supply unit, wherein the plasma processing apparatus is characterized in that the gas supply unit includes: a first pipe that supplies a first gas that is an etching gas to the processing chamber; and supplies a second gas that is an etching gas. a second pipe to the processing chamber; and a third pipe connected to the second pipe through which a third gas as a deposition treatment gas flows, the second pipe is configured to prevent the third gas from flowing to the second pipe. A fourth valve in the direction of the supply source of the second gas.
Description
technical field [0001] The present invention relates to a plasma processing apparatus using plasma related to semiconductor manufacturing. Background technique [0002] In recent years, the high integration of devices has been promoted, and processing technology at the atomic layer level is required. The complexity of the device structure, the miniaturization of the device structure, and the high aspect ratio of the device structure are advancing year by year, so the CD size control and depth control of the sparse and dense parts of the high aspect ratio structure have become key technologies. [0003] In the past, in order to control the difference in density, plasma was generated in the etching chamber to adjust the etching and deposited film, but the problem of poor step coverage under high aspect ratio patterns has become increasingly apparent. For this subject, the use of atomic layer deposition (Atomic Layer Deposition: ALD, hereinafter referred to as ALD) capable of ...
Claims
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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32449H01J37/32192F16K51/02C23C16/45536H01J37/32266H01J37/3461C23C16/455H01L21/3065F16K31/0675F16K31/12F16K31/0603
Inventor 卢克·约瑟夫·辛贝勒园田靖植村崇市丸朋祥佐佐木惇也
Owner HITACHI HIGH-TECH CORP