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System and method for manufacturing N-type passivation contact battery

A battery, N-type technology, applied in the field of solar cells, can solve the problems of expensive production equipment, high manufacturing cost, complex process, etc., and achieve the effect of promoting mass production.

Pending Publication Date: 2019-07-02
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of these two battery technologies are that the production equipment is very expensive, the process is complicated, the manufacturing cost is high, and there are also high technical barriers

Method used

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  • System and method for manufacturing N-type passivation contact battery
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  • System and method for manufacturing N-type passivation contact battery

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Embodiment Construction

[0045] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0046] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0047] reference figure 1 , figure 1 It is a schematic structural diagram of a manufacturing system of an N-type passivation contact cell provided by an embodiment of the present i...

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Abstract

The technical scheme of the invention discloses a system and method for manufacturing an N-type passivation contact battery. The edge isolation technology is combined with PECVD, thereby solving the problem of front polycrystalline silicon thin film edge residue caused by deposition of an n+ polycrystalline silicon layer in an LPCVD method and deposition of a second mask layer in a PECVD method. The technical scheme can be compatible with a production line for conventionally manufacturing a P-type battery, and promotes the mass production promotion of the N-type passivation contact efficient batteries.

Description

Technical field [0001] The present invention relates to the technical field of solar cells, and more specifically, to a manufacturing system and method of an N-type passivation contact cell. Background technique [0002] N-type batteries benefit from their high efficiency, low attenuation and other advantages, and become a new research and development hotspot in today's photovoltaic industry. In particular, PERC (Passivated Emitter and Rear Cell) batteries may face serious LeTID ( For attenuation issues such as Light elevated Temperature Induce Degradation (heat-assisted light attenuation), many photovoltaic product suppliers have included N-type products in their mass production plans. In terms of high-efficiency N-type technology, the most typical representatives are IBC (Interdigitated back contact) batteries and HIT (Heterojunction with Intrinsic Thinfilm) batteries. However, the disadvantages of these two battery technologies are that the production equipment is very expens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/1868H01L31/022425Y02P70/50
Inventor 杨洁郑霈霆张昕宇金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
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