A method of manufacturing a semiconductor device and an integrated semiconductor device

Abstract

The invention provides a manufacturing method of a semiconductor device and an integrated semiconductor device. During the manufacturing process of the semiconductor device integrated with an enhancement device and a depletion device, a dielectric island on an epitaxial layer and a trench in the epitaxial layer are formed. In the process of forming the channel of the depletion device, because the existence of the dielectric island blocks the implantation of channel ions, the ion concentration under the dielectric island is low, which greatly improves the breakdown reliability of the device in the on state; at the same time, due to The existence of the dielectric island increases the thickness of the gate dielectric layer, reduces the gate capacitance, and reduces the switching loss of the device. Setting trenches in the epitaxial layer as the isolation structure of the enhancement-mode device and the depletion-mode device improves the isolation characteristics between the enhancement-mode device and the depletion-mode device on the one hand, and reduces the chip area occupied by the isolation structure on the other hand.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device and an integrated semiconductor device. Background technique [0002] Vertical double-diffused metal oxide field effect devices (VDMOS) include enhancement mode and depletion mode, which have the advantages of good on-off characteristics and low power consumption, and are widely used in LED drivers and power adapters. However, most of the existing VDMOS devices of different types adopt independent packaging, which will bring disadvantages such as increase of process cost and excessive chip area. [0003] A semiconductor device that integrates an enhanced VDMOS device and a depletion-type VDMOS device. Since there is usually a potential difference between the source of the depletion-type device and the source of the enhancement-type device, it is used in the enhancement-type device and the depletion-type device. Set deep...

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Problems solved by technology

However, most of the existing different types of VDMOS devices use independent packaging, which will lead to an increase in process costs and disadvantages such as excessive chip area.

[0003] A semiconductor device that integrates an enhanced VDMOS device and a depleted VDMOS device. Since there is usually a potential difference between the source of the depleted device and the source of the enhanced device, it is used in the enhanced device and the depleted device. Set deep wells between them as the isolation structure, however, this method has no obvious effect on reducing leakage, and at the same time, in order to better the isolation effect, it is necessary to increase the number of deep wells, thus wasting a lot of chip area

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