An integrated semiconductor device and electronic device

Abstract

The invention provides an integrated semiconductor device and an electronic device, which can integrate a depletion device and an enhancement device on one semiconductor device, and package the two devices at the same time, saving process flow and chip area. At the same time, the gate structure Dielectric islands are arranged below. During the process of channel formation of depletion-type devices, the existence of dielectric islands blocks the implantation of channel ions, and the ion concentration below the dielectric islands is low, which greatly improves the breakdown reliability of devices in the on state. At the same time, due to the existence of the dielectric island, the thickness of the gate dielectric layer is increased, the gate capacitance is reduced, and the switching loss of the device is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an integrated semiconductor device and an electronic device. Background technique [0002] Existing semiconductor devices include enhancement mode and depletion mode semiconductor devices, such as vertical double diffused metal oxide field effect devices (VDMOS) including enhancement mode VDMOS devices and depletion mode VDMOS devices, which have good on-off characteristics and low power consumption. Advantages, widely used in LED drivers, power adapters, etc. However, most of these existing products are independently packaged, which brings disadvantages such as increased process cost and excessive chip area. [0003] In an integrated semiconductor device integrating an enhanced VDMOS device and a depletion-type VDMOS device, when the depletion-type VDMOS device is in the on-state operation, due to the high concentration near the channel surface, the depletion will be ...

AI Technical Summary

Problems solved by technology

However, most of these existing products are independently packaged, which brings disadvantages such as increased process costs and excessive chip area.

[0003] In an integrated semiconductor device integrating an enhanced VDMOS device and a depletion-type VDMOS device, when the depletion-type VDMOS device is in the on-state operation, due to the high concentration near the channel surface, the depletion will be insufficient, causing the surface peak electric field to exceed High, the breakdown stability becomes poor; at the same time, there are usually harsh working environments such as surge currents in the actual load circuit, and it is easy to cause thermal burnout of the device during the process of passing the avalanche current; in the case of high frequency , the power consumption of the device will increase significantly

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