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9results about How to "Improve isolation characteristics" patented technology

Dual-frequency dual-circularly-polarized common-aperture microstrip antenna

At present, a multi-feed-point antenna form is mostly adopted by a dual-frequency dual-circularly-polarized common-caliber antenna, and a complex feed network needs to be added, so that the loss of a system is increased, and the cost is not favorably reduced. According to the dual-frequency dual-circularly-polarized common-caliber microstrip antenna provided by the invention, two circularly-polarized microstrip antennas working in the S frequency band and the C frequency band respectively adopt a 1: 4 ratio nested design, and the S frequency band antenna patch adopts a four-leaf boomerang-shaped design, so that the shielding effect of the S frequency band antenna on the C frequency band antenna is reduced, and the isolation characteristic between the S frequency band antenna and the C frequency band antenna is improved; the problem of signal interference between nested antennas is solved; and meanwhile, the gap of the C frequency band is rotated, and the feed strip lines of the dual-frequency-band antenna are arranged on the same layer, so that the low-cost design of the dual-frequency nested antenna is realized.
Owner:NANJING RES INST OF ELECTRONICS TECH

Input switch protection device and method for DCDC converter

The invention provides an input switch protection device and method for a DCDC converter. The input switch protection device comprises a power switch module which comprises a first switch Q1, a second switch Q2 and a third switch Q3, and the first switch Q1, the second switch Q2 and the third switch Q3 are voltage type semiconductor switches; the current detection protection and alarm module comprises an overcurrent comparison unit and a protection and alarm reset unit, and the protection and alarm reset unit comprises a first triode Q4, a first diode D1 and a second diode D2; the collector electrode of the first triode Q4 is connected to the cathode of a first diode D1, and the anode of the first diode D1 is connected to the grid electrodes of the second switch Q2 and the third switch Q3 through a second resistor R2; the base electrode of the first triode Q4 is connected to the overcurrent comparison unit through a third resistor R3 and a second diode D2 which are connected in series; and the emitter of the first triode Q4 is connected to a negative power supply rail and is also connected to the base of the first triode Q4 through a fourth resistor R4.
Owner:SUZHOU XINNENG XIANFENG TESTING TECH CO LTD +2

Connector

In a connector in which a flat conductor is connected to a substrate, the isolation characteristics of the connector are improved, and noise is reduced. A connector (1) is provided with a signal terminal, first ground terminals (21), second ground terminals (31), and a housing (51), the housing (51) having an insertion portion (52) for inserting an end portion of a flat conductor into the housing (51) from the front of the housing (51), the first ground terminals (21) being respectively disposed on the right and left of the signal terminal, the signal terminal and the first ground terminals (21) extending forward from the rear of the housing (51), and the second ground terminals (31) extending forward from the rear of the housing (51). The second ground terminal (31) is disposed on the right of the first ground terminal (21) on the right side or on the left of the first ground terminal (21) on the left side, and extends rearward from the front portion of the housing (51), and when the connector (1) is viewed from the right side or the left side, the front portion of the signal terminal, the front portion of the first ground terminal (21), and the rear portion of the second ground terminal (31) overlap each other.
Owner:HIROSE ELECTRIC CO LTD

A lumped power divider based on T-type equivalent circuit and its design method

The present invention designs a lumped power divider based on a T-type equivalent circuit and a design method thereof, wherein the lumped power divider includes an input port, two output ports and two branches; the two branches are symmetrical and identical; the input ends of the two branches are connected to the input port, and the output ends of the two branches are connected to at least two output ports in a one-to-one correspondence; one of the branches includes at least a first-order electromagnetic hybrid coupling T-type equivalent circuit, a second-order T-type equivalent circuit and a third-order T-type equivalent circuit. The above design ensures that the power divider achieves good working performance in each band of ultra-wideband frequency bands, the electromagnetic hybrid coupling T-type equivalent circuit effectively expands the bandwidth, and the use of resistors and capacitors for isolation has high isolation, low insertion loss, and good input and output impedance matching performance in the working frequency band, meeting the current market demand.
Owner:NANJING UNIV OF POSTS & TELECOMM

Silicon-on-insulator (SOI)-based germanium-silicon heterojunction bipolar transistor collector region structure and processing method

The invention discloses an SOI (Silicon On Insulator)-based germanium-silicon heterojunction bipolar transistor collector region structure and a processing method thereof. The structure comprises a silicon-on-insulator base structure; covering a silicon oxide layer; etching a groove which passes through the covering silicon oxide layer and the silicon-on-insulator base structure and extends into the p-type lightly doped silicon substrate; the silicon oxide inner side wall is formed on the side wall of the etching groove and extends to the p-type lightly doped silicon substrate, and a cavity is defined in the etching groove; the non-doped silicon epitaxial layer is positioned at the bottom of the cavity and is formed on the p-type lightly doped silicon substrate; the n-type heavily-doped silicon buried layer collector region is formed on the non-doped silicon epitaxial layer, and the bottom of the n-type heavily-doped silicon buried layer collector region is higher than the bottom of the silicon oxide inner side wall; and the n-type lightly doped silicon epitaxial collector region is formed on the n-type heavily doped silicon buried layer collector region. The collector region-substrate parasitic capacitance is effectively reduced, the device isolation is improved, and the frequency response performance and the operation reliability of a radio frequency and high-speed circuit can be improved.
Owner:SEMICON TECH INNOVATION CENT(BEIJING) CORP +1

A CPW-fed high-isolation dual-stopband MIMO antenna

The present invention relates to a CPW-fed high-isolation dual-stopband MIMO antenna, comprising a substrate, an antenna and a ground plane, characterized in that the antenna comprises two radiating units, each radiating unit contains a circular monopole UWB antenna, the two circular monopole UWB antennas are perpendicular to each other, and the circular monopole UWB antenna corrodes an SRR slot. Compared with the prior art, the coplanar waveguide feeding method of the present invention can reduce the dispersion effect and is simple to manufacture, with a compact structure, eliminating winding, vias and corresponding parasitic source inductance, reducing the radiation loss caused by surface waves, and increasing the antenna gain; it has high isolation and notch characteristics; it uses economical FR4 material, is small in size, and has a simple overall antenna structure and is easy to process.
Owner:SHANGHAI UNIVERSITY OF ELECTRIC POWER

Lumped parameter ring packer laminated film electrode ferrite assembly

The invention provides a lumped parameter loop separator laminated film electrode ferrite assembly, and belongs to the technical field of communication devices, the lumped parameter loop separator laminated film electrode ferrite assembly comprises a laminated film electrode and a ferrite electrode which are laminated, the film electrode is arranged on the upper layer of the ferrite electrode, and the laminated film electrode and the ferrite electrode are interconnected through a connection structure. The laminated film electrode comprises a plurality of groups of dielectric films and electrodes which are alternately distributed, the electrodes are electrically insulated through the dielectric films, the middle positions of the plurality of groups of electrodes coincide, the end points of the electrodes are located at the edges of the dielectric films, the ferrite electrode comprises a ferrite sheet and a ferrite bottom surface metallization layer, and the ferrite sheet is arranged on the ferrite bottom surface metallization layer. The connecting structure is located at the edge of the ferrite electrode and corresponds to a plurality of electrode end points, the film electrode and the ferrite electrode are welded together to form a film ferrite assembly, and the film ferrite assembly is attached to a PCB substrate and connected into a PCB circuit. According to the invention, signal circulation and isolation effects are realized in the circuit, and the working stability and reliability of the circuit are improved.
Owner:CETC DEQING HUAYING ELECTRONICS

High-power, high-isolation coaxial power divider / combiner

ActiveCN224288546UImprove standing wave characteristicsImprove isolation characteristicsCoupling devicesMicrowaveHigh isolation
This invention provides a high-power, high-isolation coaxial power divider / combiner, relating to the field of microwave communication device technology. It solves the limitations of traditional power dividers / combiners, such as poor standing wave ratio (SWR) at the power divider ports and lack of isolation between adjacent ports. The power divider / combiner includes a common port, multiple branch ports, and multiple branch line structures. The common port is located on one of the branch line structures, which symmetrically connects to the other branch line structures, which in turn connect to the multiple branch ports. Each branch line structure also has multiple isolation ports for connecting isolation resistors. When used as a power divider, the common port receives the signal input, and each branch port outputs a signal with evenly distributed energy. When used as a combiner, the principle is reversed. This invention, through structural design and the use of isolation resistors, ensures the SWR at the output ports and guarantees the isolation between adjacent ports.
Owner:SICHUAN ZHONGJIU DEFENSE TECH CO LTD