A kind of field effect transistor and its preparation method
A technology of field effect transistor and solution method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low light extraction efficiency and high production cost of field effect transistors, and achieve improved light output efficiency, low cost, and The effect of simple preparation method
Active Publication Date: 2020-11-17
TCL CORPORATION
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[0005] In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a field effect transistor and its preparation method, aiming to solve the problems of low light extraction efficiency and high production cost of the existing field effect transistor
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[0037] The present invention provides a field effect transistor and its preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0038] The invention provides a method for preparing a field effect transistor, which comprises the following steps:
[0039] 100. Prepare a first insulating layer on the first electrode;
[0040] 200. Prepare a second insulating layer with a concave-convex structure on the first insulating layer by a solution method;
[0041] 300. Prepare a light emitting device on the second insulating layer to obtain a field effect transistor.
[0042] Compared with traditional methods such as etching, the present invention prepares the second insulating layer with a concave-con...
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Abstract
The invention discloses a field effect transistor and a preparation method thereof. The method comprises the following steps: preparing a first insulating layer on a first electrode; preparing a second insulating layer with a concave-convex structure on the first insulating layer by a solution method; A light emitting device is prepared on the second insulating layer to obtain a field effect transistor. The present invention prepares the second insulating layer with a concave-convex structure through a solution method. The existence of the concave-convex structure will affect the structure and performance of the OLED device or QLED device prepared thereon, which is specifically manifested in enhancing the light extraction rate of the device and improving the efficiency of the device. Light extraction efficiency; the preparation method of the field effect transistor of the present invention is simple and low in cost.
Description
technical field [0001] The invention relates to the field of field effect transistors, in particular to a field effect transistor and a preparation method thereof. Background technique [0002] In recent years, quantum dot light-emitting diodes (QLEDs) and organic light-emitting diodes (OLEDs) have gained widespread attention in the fields of lighting and display due to their advantages such as high brightness, low power consumption, wide color gamut, and easy processing. In the context of the rapid development of microelectronics technology, field-effect transistors (FETs) are one of the most widely used devices in microelectronics. In the prior art, FETs have been integrated with organic light emitting devices, and the source and drain currents of the transistors are controlled by the gate voltage of the transistors to control the light emission of the devices, so that the FETs are used in the driving unit of flat panel display. [0003] High-performance light-emitting fi...
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IPC IPC(8): H01L51/52H01L51/56H01L27/32
CPCH10K59/12H10K50/85H10K71/00
Inventor 辛征航向超宇李乐张滔
Owner TCL CORPORATION