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Ion implanter and method for manufacturing the chamber of the ion implanter

A technology for ion implantation and implantation machines, which is applied in the field of ion implantation machines with diamond-like carbon layers, and can solve problems such as polluting conductive paths, reducing machine utilization, and coating residues on components or inner walls

Active Publication Date: 2021-07-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These coatings may form a source of contamination in the process or create unintended conductive paths
Although the components or inner walls can be cleaned during preventive maintenance (PM), some coatings may still remain on the components or inner walls, and the maintenance process will also reduce the utilization rate of the machine

Method used

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  • Ion implanter and method for manufacturing the chamber of the ion implanter
  • Ion implanter and method for manufacturing the chamber of the ion implanter
  • Ion implanter and method for manufacturing the chamber of the ion implanter

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Embodiment Construction

[0013] The making and using of the present embodiments are discussed in detail below, however, it should be appreciated that the present disclosure provides practical innovative concepts which can be presented in a wide variety of specific contexts. The embodiments or examples described below are for illustration only, and do not limit the scope of the present disclosure.

[0014] Spatially relative terms such as "beneath", "below", "lower", "above", "upper", etc. may be used in this disclosure to facilitate Describe to describe the relationship of one element or feature to another or more elements or features, as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. Alternatively, the device could be turned (rotated 90 degrees or otherwise), and the spatially relative descriptors used in this case should be construed accordingly.

[0015...

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Abstract

An ion implanter and a manufacturing method of an ion implanter chamber. This ion implanter contains a chamber. The chamber includes at least a first chamber wall and a first diamond-like carbon layer. The at least one first cavity wall defines a process space. The first diamond-like carbon layer is disposed on the at least one first cavity wall. The first diamond-like carbon layer includes a modified first surface facing the process space.

Description

technical field [0001] The embodiments of the present disclosure are related to an ion implanter and a method for manufacturing the chamber of the ion implanter, in particular to an ion implanter with a diamond-like carbon layer, and such a diamond carbon layer is arranged in the chamber on the inside surface. Background technique [0002] The ion implantation process has been widely used in industries such as integrated circuits, light emitting diodes, and solar cells. The ion implantation process can selectively dope ions to specific regions in the workpiece under specific conditions. Generally speaking, during the ion implantation process, one or more materials are firstly dissociated into plasma in the ion source, and then ions are continuously extracted from the plasma to form an ion beam. The ion beam will be filtered, accelerated and decelerated, adjusted in direction, and adjusted in cross-sectional profile successively, and finally guided to a specific area of ​​t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/02H01J37/317H01L21/67H01L31/18H01L33/00
CPCH01J37/02H01J37/3171H01J2237/022H01L21/67011H01L31/18H01L33/00Y02P70/50
Inventor 林宜静陈其贤吴欣贤张钧琳
Owner TAIWAN SEMICON MFG CO LTD