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Three-dimensional memory and preparation method thereof

A memory and memory layer technology, which is applied in the direction of semiconductor devices, electrical solid state devices, electrical components, etc., can solve the problems of coupling deterioration and difficulty in meeting the requirements of the memory layer structure, so as to improve retention characteristics, improve low-field programming characteristics, and improve film The effect of layer quality

Inactive Publication Date: 2019-07-12
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

However, as the market requires higher storage density, the number of layers in the three-dimensional memory stack structure continues to increase, and the thickness of a single layer in the stack structure continues to decrease. The cycling and retention characteristics of the existing memory layer structure are getting worse It is becoming more and more difficult to meet the requirements, and the coupling (coupling) effect during programming is deteriorating

Method used

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  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof

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preparation example Construction

[0053] The embodiment of the present invention also provides a method for preparing a three-dimensional memory; for details, please refer to the attached Figure 4 . As shown, the method includes the following steps:

[0054] Step 101, forming a stacked structure, the stacked structure includes a number of alternately stacked sacrificial layers and interlayer dielectric layers;

[0055] Step 102, forming channel via holes penetrating through the stacked structure;

[0056] Step 103, removing a portion of the sacrificial layer facing the channel via hole to form a trench;

[0057] Step 104, forming a memory layer in the trench.

[0058] In the three-dimensional memory and its preparation method provided by the embodiments of the present invention, the memory layers of each memory unit are formed in the trenches of the sacrificial layer facing the through hole of the channel, so as to correspond one-to-one with the gate layer that is finally filled, and each memory layer cons...

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Abstract

The invention discloses a three-dimensional memory and a preparation method thereof. The three-dimensional memory comprises a stacked structure and channel through holes penetrating the stacked structure, wherein the stacked structure comprises a plurality of storage units and interlayer dielectric layers which are alternately stacked, and each storage unit comprises a storage device layer and a gate layer which are arranged in order from inside to outside in the radial directions of the channel through holes.

Description

technical field [0001] The invention relates to the technical field of memory devices, in particular to a three-dimensional memory and a preparation method thereof. Background technique [0002] Memory is a memory device used to save information in modern information technology. With the continuous improvement of the demand for integration and data storage density of various electronic devices, it is increasingly difficult for ordinary two-dimensional memory devices to meet the requirements. In this case, three-dimensional (3D) memory emerges as the times require. [0003] Three-dimensional memory has become a mainstream product in the non-volatile memory market due to its high storage density, controllable production cost, suitable programming and erasing speed and retention characteristics. In a three-dimensional memory, the memory layer plays a role in controlling the charge storage of the memory, and is the key structure for the device to complete the storage function. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582H10B43/35H10B43/27
CPCH10B43/35H10B43/27
Inventor 王启光
Owner YANGTZE MEMORY TECH CO LTD
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