Thin film transistor (TFT), manufacturing method thereof, array substrate, display panel and display device

Abstract

The invention discloses a TFT, a manufacturing method thereof, an array substrate, a display panel and a display device, and aims at the problems including increase of the contact resistance of wiresbetween active layer and source / drain electrode layer with increase of the resolution and further severe RC delay and large power consumption in a display panel in the prior art. The TFT comprises anactive layer, an insulating layer and a source / drain electrode layer arranged on a substrate successively, the source / drain electrode layer is connected to the active layer by penetrating a through hole in the insulating layer, a transition layer is arranged between the source / drain electrode layer and active layer in the through hole position, the transition layer covers the bottom of the throughholes and at least part of sidewall of the through hole, and the transition layer of an integrated structure comprises elements of the active layer and elements of a first film layer.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a thin film transistor and a manufacturing method, an array substrate, a display panel, and a display device. Background technique [0002] Flat panel display (F1at Pane1 Display, FPD) has become the mainstream product in the market, and there are more and more types of flat panel displays, such as liquid crystal display (Liquid Crystal Display, LCD), organic light emitting diode (Organic Light Emitted Diode, OLED) display , Plasma Display Panel (P1asma DisplayPane1, PDP) and Field Emission Display (Field Emission Display, FED), etc. [0003] With the continuous improvement of resolution, the signal trace width and via hole size of the display panel will continue to decrease, which will lead to a further increase in the contact resistance between the active layer and the source-drain layer traces, and eventually serious RC Latency, power consumption big problem. ...

AI Technical Summary

Problems solved by technology

[0004] The invention provides a thin film transistor, a manufacturing method, an array substrate, a display panel, and a display device to improve the display panel of the prior art. When the resolution is continuously improved, the contact resistance between the active layer and the source-drain layer wiring Further increase, and eventually serious RC delay, large power consumption problems

Images