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Semiconductor structures and methods of forming them

A semiconductor and conductive structure technology, applied in the field of semiconductor structure and its formation, can solve the problem of poor performance of semiconductor structure

Active Publication Date: 2021-06-08
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the performance of the semiconductor structures formed by the double patterning process in the prior art is poor

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Experimental program
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Embodiment Construction

[0032] There are many problems in the method of forming the semiconductor structure, for example, the performance of the formed semiconductor structure is poor.

[0033] Combining with a method of forming a semiconductor structure, the reasons for the poor performance of the formed semiconductor structure are analyzed:

[0034] figure 1 with figure 2 It is a structural schematic diagram of each step of the method for forming a semiconductor structure of the present invention.

[0035] Please refer to figure 1 , provide a substrate 100, the substrate 100 includes a disconnection region A and a connection region B located on both sides of the disconnection region A, the substrate 100 has fins 101 on the disconnection region A and the connection region B respectively .

[0036] continue to refer figure 1 , forming a dielectric layer 120 on the isolation structure 110, the dielectric layer 120 covering the top and sidewalls of the fins 101; forming a patterned mask layer 131...

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Abstract

A semiconductor structure and a method for forming the same, wherein the method for forming includes: providing a substrate, the substrate including a first region and second regions located on both sides of the first region; A functional layer is formed on the first region and the second region; an initial mask layer is formed on the first region functional layer; the initial mask layer is etched to form a mask layer, and the mask layer is adjacent to the The thickness of the sidewall of the second region is greater than the thickness of the center of the mask layer; after the etching process, the functional layer is etched using the mask layer as a mask, and the functional layer in the second region Grooves are formed in the layer. The forming method can accurately control the distance between adjacent grooves, and improve the performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing in the direction of high density and high integration. In order to improve the integration of semiconductor devices, the size of semiconductor devices is getting smaller and smaller, even reaching the limit of photolithography. [0003] In order to reduce the influence of the optical proximity effect, multiple patterning processes have been developed in the prior art, including a double patterning process, a triple patterning process and a quadruple patterning process. [0004] The double patterning process can effectively reduce the difficulty of making small-size graphics, and has important applications in forming small-size graphics. The double patterning process in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/033H01L21/336H01L29/78
CPCH01L21/0337H01L21/0338H01L29/66795H01L29/785
Inventor 张城龙张冬平
Owner SEMICON MFG INT (SHANGHAI) CORP
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