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A bilateral/non -polar reversible mutual transformation blocking memory and its preparation method

A resistive variable memory, non-polar technology, applied in the direction of electrical components, etc., to achieve the effects of low time consumption, reduced mass production, reduced production costs and difficulty in research and development

Active Publication Date: 2022-08-09
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a bipolar / non-polarity reversible interchangeable resistive variable memory, to solve the problem that the existing resistive variable memory can only realize bipolar and unipolar permanent mutual transformation, and then expand the device in high density Application in storage field

Method used

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  • A bilateral/non -polar reversible mutual transformation blocking memory and its preparation method
  • A bilateral/non -polar reversible mutual transformation blocking memory and its preparation method
  • A bilateral/non -polar reversible mutual transformation blocking memory and its preparation method

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Embodiment Construction

[0036] The following examples are intended to illustrate the present invention, but not to limit the scope of the present invention.

[0037] like figure 1 As shown, a bipolar / nonpolar reversible intertransition resistive memory in this embodiment includes SiO 2 Substrate 1, inert metal Pt thin film 2, MoS as bottom electrode 2 The resistive medium layer 3 and the active metal Ag thin film 4 as the top electrode. The bottom electrode can also be made of Au, W, Al, etc., preferably Pt. The top electrode can also be made of Cu or the like, preferably Ag.

[0038] like figure 2 As shown, a method for preparing a bipolar / nonpolar reversible intertransition resistive memory in this embodiment includes the following steps:

[0039] S1: in SiO 2The bottom electrode is prepared on the substrate. Use DC magnetron sputtering, thermal evaporation or electron beam evaporation to prepare a uniform inert metal film as the bottom electrode of the device. Ionization occurs under the ...

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Abstract

The present invention relates to a bipolar / nonpolar reversible intertransform resistive memory and a preparation method thereof of the present invention, comprising a SiO2 substrate, an inert metal bottom electrode arranged on the SiO2 substrate, and a MoS2 resistor arranged on the bottom electrode. The variable dielectric layer is an active metal top electrode disposed on the MoS2 resistive variable dielectric layer. The invention solves the problem that the existing resistive memory can only realize the permanent mutual conversion of bipolar and unipolar, and further expands the application of the device in the field of high-density storage.

Description

technical field [0001] The invention relates to the technical field of a micro-nano electronic device resistive memory, in particular to a bipolar / non-polar reversible intertransition resistive memory and a preparation method thereof. Background technique [0002] With the advancement of science and technology, human beings have officially entered the era of big data, which puts forward higher requirements for data information storage. Information storage devices are developing in the direction of miniaturization and high storage density. The traditional flash memory based on the floating gate structure is limited by the problem of charge tunneling after the size reduction, and the device performance cannot be guaranteed, so it cannot meet the needs of today's society for the amount of data. Resistive random access memory (RRAM) has the advantages of simple structure, easy integration, fast read and write speed and non-destructive reading, etc., and has become a highly pote...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/841H10N70/011
Inventor 徐海阳赵晓宁范泽莹王中强马剑钢刘益春
Owner NORTHEAST NORMAL UNIVERSITY