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Bipolarity/nonpolarity reversible transformation resistance random access memory and preparation method thereof

A resistive memory, non-polar technology, applied in electrical components and other directions, to achieve the effect of reducing cost, saving time, and reducing mass production

Active Publication Date: 2019-07-30
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a bipolar / non-polarity reversible interchangeable resistive variable memory, to solve the problem that the existing resistive variable memory can only realize bipolar and unipolar permanent mutual transformation, and then expand the device in high density Application in storage field

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  • Bipolarity/nonpolarity reversible transformation resistance random access memory and preparation method thereof
  • Bipolarity/nonpolarity reversible transformation resistance random access memory and preparation method thereof
  • Bipolarity/nonpolarity reversible transformation resistance random access memory and preparation method thereof

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Embodiment Construction

[0036] The following examples are intended to illustrate the present invention, but not to limit the scope of the present invention.

[0037] like figure 1 As shown, a bipolar / nonpolar reversible intertransition resistive memory in this embodiment includes SiO 2 Substrate 1, inert metal Pt thin film 2, MoS as bottom electrode 2 The resistive medium layer 3 and the active metal Ag thin film 4 as the top electrode. The bottom electrode can also be made of Au, W, Al, etc., preferably Pt. The top electrode can also be made of Cu or the like, preferably Ag.

[0038] like figure 2 As shown, a method for preparing a bipolar / non-polar reversible intertransition resistive memory in this embodiment includes the following steps:

[0039] S1: in SiO 2The bottom electrode is prepared on the substrate. Use DC magnetron sputtering, thermal evaporation or electron beam evaporation to prepare a uniform inert metal film as the bottom electrode of the device. Ionization occurs under the...

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Abstract

The invention relates to a bipolarity / nonpolarity reversible transformation resistance random access memory (RRAM) and a preparation method thereof. The RRAM comprises an SiO<2> substrate, an inert metal bottom electrode arranged on the SiO<2> substrate, an MoS<2> resistance-varying dielectric layer arranged on the bottom electrode and reactive metal top electrodes arranged on the MoS<2> resistance-varying dielectric layer. Through the RRAM, the problem that an existing RRAM only can realize permanent transformation between bipolarity and unipolarity is solved, and therefore application of a device in the high-density storage field is expanded.

Description

technical field [0001] The invention relates to the technical field of a micro-nano electronic device resistance-change memory, in particular to a bipolar / non-polar reversible intertransform resistance-change memory and a preparation method thereof. Background technique [0002] With the advancement of science and technology, human beings have officially entered the era of big data, which puts forward higher requirements for data information storage. Information storage devices are developing in the direction of miniaturization and high storage density. The traditional flash memory based on the floating gate structure is limited by the problem of charge tunneling after the size reduction, and the device performance cannot be guaranteed, so it cannot meet the needs of today's society for the amount of data. Resistive random access memory (RRAM) has the advantages of simple structure, easy integration, fast read and write speed and non-destructive reading, etc., and has becom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/841H10N70/011
Inventor 徐海阳赵晓宁范泽莹王中强马剑钢刘益春
Owner NORTHEAST NORMAL UNIVERSITY