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A kind of solar battery sheet, its texturing method and solar battery

A technology of solar cells and silicon wafers, which is applied in the field of solar cells and can solve problems affecting the printability and contactability of subsequent pastes, uneven PN junctions, and affecting the cell efficiency of the battery series resistance fill factor, etc.

Active Publication Date: 2021-08-17
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, although the above-mentioned texturing method can form a textured surface on the surface of the silicon wafer to increase light absorption, due to the existence of the textured surface cavity, it is easy to form an uneven PN junction during subsequent diffusion, and it will affect the printing of subsequent pastes. Sex and contact, which in turn affect the series resistance (Rs), fill factor (FF) and battery efficiency of the battery

Method used

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  • A kind of solar battery sheet, its texturing method and solar battery
  • A kind of solar battery sheet, its texturing method and solar battery
  • A kind of solar battery sheet, its texturing method and solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0147] 1.1 Texturing of solar cells

[0148] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0149] S1: Alkali treatment:

[0150] The treatment agent is: potassium hydroxide solution (concentration 48%), 1.8L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 10%, the volume fraction of the additive is 0.7%, and the rest is water.

[0151] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0152] S2: pickling:

[0153] Pickling 1: use nitric acid solution with a volume fraction of 4%, and treat at 25°C for 85s;

[0154] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 8.0%, the volume fraction of HCl is 9.0%, and the rest is water.

[0155] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness of 100...

Embodiment 2

[0183] 1.1 Texturing of solar cells

[0184] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0185] S1: Alkali treatment:

[0186] The treatment agent is: potassium hydroxide solution (concentration 48%), 1.9L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 14%, the volume fraction of additive is 0.4%, and the rest is water.

[0187] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0188] S2: Pickling:

[0189] Pickling 1: use nitric acid solution with a volume fraction of 6%, and treat it at 25°C for 85 hours;

[0190] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 6.0%, the volume fraction of HCl is 12.5%, and the rest is water.

[0191] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness o...

Embodiment 3

[0213] 1.1 Texturing of solar cells

[0214] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0215] S1: Alkali treatment:

[0216] The treatment agent is: potassium hydroxide solution (concentration 48%), 2.0L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 12%, the volume fraction of additive is 0.5%, and the rest is water.

[0217] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0218] S2: pickling:

[0219] Pickling 1: use nitric acid solution with a volume fraction of 8%, and treat at 25°C for 85s;

[0220] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 10%, the volume fraction of HCl is 7.5%, and the rest is water.

[0221] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness of 100nm. ...

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Abstract

The invention provides a solar battery sheet, its texturing method and a solar battery. In the texturing method provided by the present invention, silicon wafers are first treated with alkali to remove the damaged layer on the surface of the silicon wafers and form a pyramid-like textured structure on the surface of the silicon wafers; after depositing a protective film on the textured surface, apply photoresist for exposure Develop to form a mask, form the mask that will cover the position where the positive electrode grid line needs to be printed on the front side of the silicon wafer by the exposure and development, and protect the pyramid-like textured structure at the position where the positive electrode grid line needs to be printed; After the protective film layer on the unshielded part of the mask is removed, wet black silicon etching is performed to form a micro-nano sized hole texture structure on the unshielded part of the mask; then the photoresist and protective film layer on the mask are removed A solar cell is obtained. The above-mentioned texturing method can make the silicon wafer form a uniform PN junction during diffusion, and improve the contact with the slurry, thereby reducing the series resistance Rs, increasing the fill factor FF and cell efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell sheet, a texturing method thereof and a solar cell. Background technique [0002] The production process of solar cells mainly includes: texturing of silicon wafers, diffusion, post-cleaning / etching, anti-reflection coating, screen printing and sintering. The details are as follows: ① Texturing refers to texturing the surface of the silicon wafer to form a suede surface on the surface of the silicon wafer, thereby forming an effective anti-reflection effect. ②The purpose of diffusion is to form a PN junction: at high temperature, use the impurity source to process the textured silicon wafer. Specifically, put the P-type silicon wafer into the diffusion furnace, and make the N-type impurities through the gaps between silicon atoms. Atoms diffuse from the surface of the silicon wafer to the inside to form a PN junction, so that electrons and holes will not return ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/04H01L31/18
CPCH01L31/0224H01L31/04H01L31/1876Y02E10/50Y02P70/50
Inventor 李超付少剑黄明徐昆孟少东雷佳
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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