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Solar cell, texturing method thereof and solar cell

A technology of solar cells and silicon wafers, which is applied in the field of solar cells, and can solve the problems of affecting the printability and contactability of subsequent pastes, affecting the filling factor of battery series resistance, cell efficiency, uneven PN junctions, etc.

Active Publication Date: 2019-08-09
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, although the above-mentioned texturing method can form a textured surface on the surface of the silicon wafer to increase light absorption, due to the existence of the textured surface cavity, it is easy to form an uneven PN junction during subsequent diffusion, and it will affect the printing of subsequent pastes. Sex and contact, which in turn affect the series resistance (Rs), fill factor (FF) and battery efficiency of the battery

Method used

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  • Solar cell, texturing method thereof and solar cell
  • Solar cell, texturing method thereof and solar cell
  • Solar cell, texturing method thereof and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0147] 1.1 Texturing of solar cells

[0148] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0149] S1: Alkali treatment:

[0150] The treatment agent is: potassium hydroxide solution (concentration 48%), 1.8L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 10%, the volume fraction of the additive is 0.7%, and the rest is water.

[0151] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0152] S2: pickling:

[0153] Pickling 1: use nitric acid solution with a volume fraction of 4%, and treat at 25°C for 85s;

[0154] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 8.0%, the volume fraction of HCl is 9.0%, and the rest is water.

[0155] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness of 100...

Embodiment 2

[0183] 1.1 Texturing of solar cells

[0184] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0185] S1: Alkali treatment:

[0186] The treatment agent is: potassium hydroxide solution (concentration 48%), 1.9L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 14%, the volume fraction of additive is 0.4%, and the rest is water.

[0187] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0188] S2: Pickling:

[0189] Pickling 1: use nitric acid solution with a volume fraction of 6%, and treat it at 25°C for 85 hours;

[0190] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 6.0%, the volume fraction of HCl is 12.5%, and the rest is water.

[0191] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness o...

Embodiment 3

[0213] 1.1 Texturing of solar cells

[0214] Processing object: polysilicon wafer, length 156.75mm×width 156.75mm×thickness 180μm;

[0215] S1: Alkali treatment:

[0216] The treatment agent is: potassium hydroxide solution (concentration 48%), 2.0L additive NNM-A2; wherein, the volume fraction of potassium hydroxide is 12%, the volume fraction of additive is 0.5%, and the rest is water.

[0217] The silicon wafer was immersed in the above treatment agent, and treated at 79°C for 220s.

[0218] S2: pickling:

[0219] Pickling 1: use nitric acid solution with a volume fraction of 8%, and treat at 25°C for 85s;

[0220] Pickling 2: Then use a mixed acid solution of HF and HCl, and treat it at 30°C for 150s; in the mixed acid solution, the volume fraction of HF is 10%, the volume fraction of HCl is 7.5%, and the rest is water.

[0221] S3: Deposit protective film: Deposit Si on the front side of the silicon wafer by PECVD method 3 N 4 film layer with a thickness of 100nm. ...

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Abstract

The invention provides a solar cell, a texturing method thereof and a solar cell. The texturing method provided by the invention comprises the following steps: firstly, carrying out alkali treatment on a silicon wafer, removing a damaged layer on the surface of the silicon wafer and forming a pyramid-like textured structure on the surface of the silicon wafer; after a protective film is depositedon the suede, performing the coating of photoresist for exposure and development to form a mask, and forming the mask for shielding the position, at which the positive electrode grid line needs to beprinted, of the front face of the silicon wafer through exposure and development, and protecting the pyramid-like suede structure at the position at which the positive electrode grid line needs to beprinted; after the protective film layer at the unshielded part of the mask is removed, performing the wet black silicon etching treatment, and forming a micro-nano hole suede structure at the unshielded part of the mask; and removing the photoresist and the protective film layer at the mask to obtain the solar cell. According to the texturing method, a uniform PN junction can be formed during thediffusion of the silicon wafer, and the contact with slurry is improved, so that the series resistance Rs is reduced, and the filling factor FF and the battery efficiency are improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell sheet, a texturing method thereof and a solar cell. Background technique [0002] The production process of solar cells mainly includes: texturing of silicon wafers, diffusion, post-cleaning / etching, anti-reflection coating, screen printing and sintering. The details are as follows: ① Texturing refers to texturing the surface of the silicon wafer to form a suede surface on the surface of the silicon wafer, thereby forming an effective anti-reflection effect. ②The purpose of diffusion is to form a PN junction: at high temperature, use the impurity source to process the textured silicon wafer. Specifically, put the P-type silicon wafer into the diffusion furnace, and make the N-type impurities through the gaps between silicon atoms. Atoms diffuse from the surface of the silicon wafer to the inside to form a PN junction, so that electrons and holes will not return ...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/04H01L31/18
CPCH01L31/0224H01L31/04H01L31/1876Y02E10/50Y02P70/50
Inventor 李超付少剑黄明徐昆孟少东雷佳
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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