Preparation method for highly-dispersed few-layer graphene

A technology of graphene and graphene, which is applied in the field of preparation of highly dispersed and low-defect single-layer or few-layer graphene, can solve problems such as large thickness, high defect rate, and inability to obtain single-layer or few-layer graphene, and achieve sheet Thin layer, long stable time, which is conducive to the effect of large-scale production in the later stage

Inactive Publication Date: 2019-08-13
SHANDONG OBO NEW MATERIAL CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method still has the problem of stacking of graphene material sheets and large thickness, and it is impossible to obtain single-layer or few-layer graphene, and the defect rate is high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for highly-dispersed few-layer graphene
  • Preparation method for highly-dispersed few-layer graphene
  • Preparation method for highly-dispersed few-layer graphene

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0046] The invention provides a kind of preparation method of graphene, comprises the following steps:

[0047] A) after mixing the graphene oxide dispersion and the tea polyphenols material, a mixed solution is obtained;

[0048] B) After passing an auxiliary gas into the mixed liquid obtained in the above steps and reacting, a reaction liquid is obtained; the auxiliary gas includes one or more of hydrogen, nitrogen and inert gases;

[0049] C) After post-processing the reaction solution obtained in the above steps, graphene is obtained.

[0050] In the present invention, firstly, the graphene oxide dispersion liquid and the tea polyphenols material are mixed to obtain a mixed liquid.

[0051] The present invention has no special restrictions on the tea polyphenol materials, and the conventional tea polyphenol materials well known to those skilled in the art can be used. Those skilled in the art can select and adjust according to actual application conditions, product requirem...

Embodiment 1

[0070] 1. Mix the graphene oxide slurry produced by Shandong Oupo New Material Co., Ltd. with an appropriate amount of water, and add tea polyphenols to obtain a mixed solution A, wherein the mass fraction of the graphene oxide slurry is 3‰, a total of 4000g, tea polyphenols The mass of the phenol was 12 g, and the graphene oxide tea polyphenol aqueous dispersion was obtained by ultrasonication and stirring at room temperature. The ultrasonic time is 30min, the ultrasonic frequency is 40KHz, and the stirring speed is 350r / min.

[0071] 2. Bubble N into the mixed solution A obtained in step 1 2 , wherein the nitrogen flow rate is 80mL / min, the duration of bubbling is 30min, and the stirring speed is 100r / min; the mixture B is obtained.

[0072] 3. Keep N in the mixed solution B obtained in step 2 2 was blown in, heated to 80°C, and continuously stirred for 480min at a speed of 300r / min to obtain a mixed solution C.

[0073] 4. Wash and dry the mixed solution C obtained in st...

Embodiment 2

[0085] 1. Mix the graphene oxide slurry produced by Shandong Oupo New Material Co., Ltd. with an appropriate amount of water, and add tea polyphenols to obtain a mixed solution A, wherein the mass fraction of the graphene oxide slurry is 3‰, a total of 4000g, tea polyphenols The mass of the phenol was 24 g, and the graphene oxide tea polyphenol aqueous dispersion was obtained by ultrasonication and stirring at room temperature. The ultrasonic time is 30min, the ultrasonic frequency is 40KHz, and the stirring speed is 350r / min.

[0086] 2. Bubble H into the mixed solution A obtained in step 1 2 , wherein the hydrogen flow rate is 60ml / min, the duration of bubbling is 30min, and the stirring speed is 100r / min; the mixture B is obtained.

[0087] 3. Keep H in the mixed solution B obtained in step 2 2 was blown in, heated to 80°C, and continuously stirred for 480min at a speed of 300r / min to obtain a mixed solution C.

[0088] 4. Wash and dry the mixed solution C obtained in st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method for highly-dispersed few-layer graphene. The preparation method comprises the following steps that firstly, a graphene oxide dispersion liquid and a tea polyphenol material are mixed to obtain a mixed liquid; secondly, auxiliary gas is introduced into the mixed liquid obtained in the previous step for a reaction to obtain a reaction liquid, wherein the auxiliary gas includes one or more of hydrogen, nitrogen and inert gas; finally, the reaction liquid obtained in the previous step is post-treated to obtain the graphene. According to the preparation method, an environment-friendly reduction mode combining the auxiliary gas and the tea polyphenol material is adopted, a pi-pi stacking function among sheet layers of the graphene is greatly hindered,and interlayer stacking of the graphene in the reduction process is effectively prevented while graphene oxide is reduced. The functionalized single-layer or few-layer graphene prepared by means of the method has the thin sheet layers, no obvious stacking phenomenon occurs among the sheet layers of the graphene, the preparation process is simple, the condition is mild, the time is short, the preparation method is environmentally friendly and free of pollution, and the application, popularization and later large-scale production of the graphene are facilitated.

Description

technical field [0001] The invention belongs to the technical field of graphene materials, and relates to a method for preparing graphene, in particular to a method for preparing highly dispersed and low-defect single-layer or few-layer graphene. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is a planar film composed of carbon atoms with sp2 hybrid orbitals to form a hexagonal honeycomb lattice. It is a two-dimensional material with a thickness of only one carbon atom. It has many excellent theoretical properties. It is used in energy storage materials, environmental engineering, and sensitive transmission. Sensitivity is widely used, known as "black gold" or "king of new materials", and the potential application prospects are broad, and it has become the focus of attention and research hotspots all over the world. [0003] However, in practical applications, there are still many problems and restri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B2204/02C01B2204/04
Inventor 岳利张在忠赵永彬吴开付程金杰
Owner SHANDONG OBO NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap