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A kind of preparation method of the solar cell of antimony sulfide base thin film after annealing treatment of alcohol vapor

A solar cell, antimony sulfide-based technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of large-scale industrial applications that limit the photoelectric conversion efficiency of antimony sulfide-based thin film solar cells, small grain size and poor crystallinity of antimony sulfide thin films And other issues

Active Publication Date: 2020-10-27
RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the annealing methods mainly include traditional and programmed methods, but neither of these two methods can effectively solve the problems of small grain size and poor crystallinity of antimony sulfide thin films, which limits the photoelectric conversion efficiency of antimony sulfide based thin film solar cells. Lifting and Large-Scale Industrial Applications

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  • A kind of preparation method of the solar cell of antimony sulfide base thin film after annealing treatment of alcohol vapor
  • A kind of preparation method of the solar cell of antimony sulfide base thin film after annealing treatment of alcohol vapor
  • A kind of preparation method of the solar cell of antimony sulfide base thin film after annealing treatment of alcohol vapor

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preparation example Construction

[0029] Adopt the preparation method of the solar cell of antimony sulfide-based thin film after the annealing treatment of alcohol vapor, it is characterized in that the steps are as follows:

[0030] 1) Treatment of FTO glass: first clean the FTO glass with decontamination powder, then ultrasonically treat it with deionized water, acetone and absolute ethanol for 5-15 minutes, dry it with nitrogen, and finally perform UV treatment for 5- 20min;

[0031] 2) Preparation of electron transport layer: the present invention adopts TiO 2 As an electron transport material, spin-coat the solution on the FTO glass treated in step 1) at a rate of 1000-5000rpm / min for 20-80s, then anneal at 100-500°C in air for 10-60min, and then slowly After cooling to room temperature, dense TiO can be obtained 2 layer;

[0032] 3) Preparation of antimony sulfide light-absorbing layer: move the substrate treated in step 2) into a glove box protected by nitrogen gas. Will Sb 2 o 3 CS diluted in powd...

Embodiment 1

[0045] 1) Treatment of FTO glass: first, clean the FTO glass with a size of 15mm×15mm and an impedance of 14Ω / sq with decontamination powder, then ultrasonically treat it with deionized water, acetone and absolute ethanol for 10 minutes, and then use nitrogen gas to clean it. Blow dry, and finally UV treatment for 15 minutes;

[0046] 2) Preparation of the electron transport layer: the prepared TiO 2 The solution was spin-coated on the FTO glass treated in step 1) at a rate of 4000rpm / min for 60s, then annealed at 400°C in air for 40min, and then slowly cooled to room temperature to obtain dense TiO 2 layer;

[0047] 3) Preparation of antimony sulfide light-absorbing layer: move the substrate treated in step 2) into a glove box protected by nitrogen gas. Will Sb 2 o 3 Powder (1.0mmol, AR), CS diluted in ethanol (2mL, GR) 2 (2mL, AR) and n-butylamine (1.5mL, AR) were fully mixed and stirred to obtain a precursor solution of antimony, which was added dropwise on TiO 2 On t...

Embodiment 2

[0052] 1) Treatment of FTO glass: first, clean the FTO glass with a size of 15mm×15mm and an impedance of 14Ω / sq with decontamination powder, then ultrasonically treat it with deionized water, acetone and absolute ethanol for 10 minutes, and then use nitrogen gas to clean it. Blow dry, and finally UV treatment for 15 minutes;

[0053] 2) Preparation of the electron transport layer: the prepared TiO 2 The solution was spin-coated on the FTO glass treated in step 1) at a rate of 4000rpm / min for 60s, then annealed at 400°C in air for 40min, and then slowly cooled to room temperature to obtain dense TiO 2 layer;

[0054] 3) Preparation of antimony sulfide light-absorbing layer: move the substrate treated in step 2) into a glove box protected by nitrogen gas. Will Sb 2 o 3 Powder (1.0mmol, AR), CS diluted in ethanol (2mL, GR) 2 (2mL, AR) and n-butylamine (1.5mL, AR) were fully mixed and stirred to obtain a precursor solution of antimony, which was added dropwise on TiO 2 On t...

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Abstract

The invention relates to a preparation method for solar cells based on alcohol vapor post-annealing treatment of an antimony sulfide-based film. Alcohol vapor post-annealing treatment is adopted for an antimony sulfide light absorbing layer. After an antimony sulfide film is prepared by spin-coating a TiO2 electron transport layer with precursor solution of antimony, the antimony sulfide film is post-annealed by an 'alcohol vapor post-annealing treatment method'. Compared with the traditional preparation method, the method makes the surface of the film smoother. At the same time, in the alcohol molecules, the hydroxyl hydrogen in the alcohol interacts with the lone pair electrons at the end S of Sb2S3. The alcohol vapor can partially dissolve the grain boundary of the film, cause the growth of film grains and improve the crystallization quality. The 'alcohol vapor post-annealing treatment method' significantly improves the open-circuit voltage (VOC), short-circuit current density (JSC), filling factor (FF) and energy conversion efficiency (PCE) of antimony sulfide-based film solar cells. Compared with the traditional annealing method, the photoelectric conversion efficiency of antimony sulfide-based film solar cells prepared by the method is increased from 4.01% to 5.27% with a year-on-year increase of 31.42%.

Description

technical field [0001] The invention belongs to the field of solar cell devices, and relates to a method for preparing a solar cell in which an antimony sulfide-based thin film is annealed after alcohol vapor. Background technique [0002] Environmental pollution and energy shortage are the main factors restricting the development of society and economy today, and the growing demand for renewable and sustainable energy has become the driving force for the research of low-cost, stable and high-efficiency solar cells. Therefore, various semiconductors such as copper zinc tin selenide, copper indium gallium selenide, lead sulfide, organic-inorganic hybrid perovskite, and antimony sulfide were used as absorber layers, all of which achieved excellent device conversion efficiencies. Among these materials, antimony sulfide (Sb 2 S 3 ) is a stable Ⅴ-Ⅵ group direct bandgap semiconductor material, which is the main component of stibnite, rich in earth crust, low in material cost and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/032H01L31/18
CPCH01L31/02168H01L31/032H01L31/1864Y02E10/50Y02P70/50
Inventor 李炫华韩剑王双洁
Owner RES & DEV INST OF NORTHWESTERN POLYTECHNICAL UNIV IN SHENZHEN