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Construction method of semiconductor quantum dot/graphene van der Waals junction flexible device

A quantum dot and semiconductor technology is applied in the construction of semiconductor quantum dot/graphene van der Waals junction thin-film flexible devices to achieve the effects of low cost, simple and controllable construction method and high repeatability

Active Publication Date: 2021-05-04
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The construction process of graphene optoelectronic devices on rigid substrates has been widely studied and perfected. However, for the construction of flexible graphene optoelectronic devices, the relevant device construction processes still face great challenges, and most of the doping methods for graphene are only compatible with rigid substrates. substrate compatible

Method used

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  • Construction method of semiconductor quantum dot/graphene van der Waals junction flexible device
  • Construction method of semiconductor quantum dot/graphene van der Waals junction flexible device

Examples

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Effect test

Embodiment 1

[0024] A method for constructing a semiconductor quantum dot / graphene van der Waals junction thin film flexible device with good surface photovoltaic performance, a method for preparing single-layer graphene by mechanical exfoliation chemical vapor deposition on a flexible substrate, and modifying the graphene Semiconductor quantum dots, control the device annealing temperature and time, optimize the van der Waals contact between semiconductor quantum dots and graphene, and successfully construct a semiconductor quantum dot / graphene van der Waals junction thin film flexible surface with ideal surface photovoltaic response performance For photovoltaic devices, follow the steps below:

[0025] 1) Wet-transfer the single-layer graphene sample prepared by chemical vapor deposition onto special paper, place it on a hot plate at 30°C for 60s, and obtain a single-layer graphene sample with special paper substrate;

[0026] 2) Paste the pressure-sensitive tape on the single-layer grap...

Embodiment 2

[0030] A semiconductor quantum dot / graphene van der Waals junction film flexible device with good surface photovoltaic performance is constructed according to the following steps:

[0031] 1) Wet-transfer the single-layer graphene sample prepared by chemical vapor deposition onto special paper, place it on a hot plate at 30°C for 60s, and obtain a single-layer graphene sample with special paper substrate;

[0032] 2) Paste the pressure-sensitive tape on the single-layer graphene film whose substrate is special paper, and apply appropriate pressure to the pressure-sensitive tape, so that the pressure-sensitive tape and the graphene covered by it are firmly bonded;

[0033] 3) Peel off the pressure-sensitive tape firmly combined with graphene from the special paper to obtain a single-layer graphene sample on a flexible substrate;

[0034] 4) MoS 2 Quantum dots are deposited in situ on the single-layer graphene film sample on the flexible substrate by chemical vapor deposition, ...

Embodiment 3

[0036] A semiconductor quantum dot / graphene van der Waals junction film flexible device with good surface photovoltaic performance is constructed according to the following steps:

[0037] 1) Wet-transfer the single-layer graphene sample prepared by chemical vapor deposition onto special paper, place it on a hot plate at 30°C for 60s, and obtain a single-layer graphene sample with special paper substrate;

[0038] 2) Paste the pressure-sensitive tape on the single-layer graphene film whose substrate is special paper, and apply appropriate pressure to the pressure-sensitive tape, so that the pressure-sensitive tape and the graphene covered by it are firmly bonded;

[0039] 3) Peel off the pressure-sensitive tape firmly combined with graphene from the special paper to obtain a single-layer graphene sample on a flexible substrate;

[0040] 4) MoS 2Quantum dots are in-situ deposited on the single-layer graphene thin film sample on the flexible substrate by atomic layer deposition...

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Abstract

The invention relates to a method for constructing a semiconductor quantum dot / graphene van der Waals junction film flexible device with good surface photovoltaic performance, a method for preparing a single-layer graphene by mechanically exfoliating a flexible substrate by a chemical vapor deposition method, and adding Modified semiconductor quantum dots on ene, controlled the annealing temperature and time of the device, optimized the van der Waals contact between semiconductor quantum dots and graphene, and successfully constructed a semiconductor quantum dot / graphene van der Waals junction with ideal surface photovoltaic response performance Thin-film flexible surface photovoltaic devices can be used for relative position detection or photodetection.

Description

technical field [0001] The invention belongs to the field of photovoltaic devices, in particular to a method for constructing a semiconductor quantum dot / graphene van der Waals junction flexible device, especially a semiconductor quantum dot / graphene van der Waals junction thin film flexible device with good surface photovoltaic performance build method. Background technique [0002] In recent years, researchers have devoted themselves to the development of flexible electronic products, hoping that they can simulate the function of skin and realize applications such as health monitoring and medical implants. Polymer thin film materials have long been the choice of flexible electronic materials due to their ideal flexibility and reliability. With the development of the preparation process of single atomic layer inorganic two-dimensional materials, single atomic layer inorganic two-dimensional materials have attracted great attention in the development of high-performance fle...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0336H01L31/0352H01L31/0392H01L31/18
CPCH01L31/0336H01L31/035218H01L31/03926H01L31/18Y02E10/50Y02P70/50
Inventor 何丹农蔡葆昉卢静
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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