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Method for constructing high-sensitivity photoelectric detector based on C60 nanorods/ZnO quantum dots

A photodetector, high-sensitivity technology, applied in the field of photodetectors, can solve the problems of weak visible light absorbance, difficulty in controlling speed, difficulty in one-dimensional C60 materials, etc.

Active Publication Date: 2021-03-30
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for one-dimensional C-based 60 Material photodetectors, there are still some challenges
The first is that the weaker visible light absorbance limits the C 60 Further development of materials in optoelectronic and photovoltaic nanodevices
Second, the preparation of high-quality one-dimensional C 60 The material is difficult
One-dimensional C 60 Nanomaterials are generally made by solution method through molecular assembly, and the speed of this process is difficult to control

Method used

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  • Method for constructing high-sensitivity photoelectric detector based on C60 nanorods/ZnO quantum dots

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A C-based 60 High-sensitivity photodetectors based on nanorods / ZnO quantum dots synthesized by an optimized solution-interface molecular self-assembly process for high-quality C 60 Nanorods are evenly distributed on any substrate by spin coating or drop coating, and ZnO quantum dots prepared by atomic layer deposition are introduced to enhance the light absorption ability and photoelectric conversion efficiency of the entire photoactive layer. 60 The high-sensitivity photodetector of nanorods / ZnO quantum dots is constructed according to the following steps:

[0028] 1) Put C 60 The powder was dissolved in chlorobenzene to make C 60 Chlorobenzene solution of the powder, and ultrasonically dispersed for 8-12 minutes to obtain C 60 Concentration range of 0.9mg / mL of C 60 The chlorobenzene solution A;

[0029] 2) Slowly and evenly add 7mL of isopropanol to 3mL of the solution A treated in step 1) through a dropper to obtain a brown precipitate. The resulting suspension ...

Embodiment 2

[0036] A C-based 60 The high-sensitivity photodetector of nanorod / ZnO quantum dot is similar to the step of embodiment 1, and is constructed according to the following steps:

[0037] 1) Add appropriate amount of C 60 The powder was dissolved in a certain amount of chlorobenzene, and ultrasonically dispersed for 8 to 12 minutes to obtain C with a concentration of 0.7 mg / mL. 60 The chlorobenzene solution A;

[0038] 2) Take the solution A, slowly and uniformly drop 9mL of isopropanol into 4mL of the C solution with a dropper. 60 In the chlorobenzene solution A, a brown precipitate was obtained, which was left to stand for 1 to 2 minutes after the dropwise addition, and then the obtained suspension was centrifuged to collect the precipitate, and the sample was washed 2 to 3 times by isopropanol centrifugation, and the washed sample The brown precipitate was dispersed in isopropanol and preserved, that is, C dispersed in isopropanol was obtained. 60 Nano stave;

[0039] 3) T...

Embodiment 3

[0044] A C-based 60 The high-sensitivity photodetector of nanorod / ZnO quantum dot is similar to the step of embodiment 1, and is constructed according to the following steps:

[0045] 1) Add appropriate amount of C 60 The powder was dissolved in a certain amount of chlorobenzene, and ultrasonically dispersed for 8 to 12 minutes to obtain C with a concentration of 1.2 mg / mL. 60 The chlorobenzene solution A;

[0046] 2) Slowly and evenly drop 6mL of isopropanol into 2mL of the C with a dropper 60 In the chlorobenzene solution A, a brown precipitate was obtained, which was left to stand for 1 to 2 minutes after the dropwise addition, and then the obtained suspension was centrifuged to collect the precipitate, and the sample was washed 2 to 3 times by isopropanol centrifugation, and the washed sample The brown precipitate was dispersed in isopropanol and preserved, that is, C dispersed in isopropanol was obtained. 60 Nano stave;

[0047] 3) ) the step 2) obtained C 60 The na...

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Abstract

The invention relates to a method for constructing a high-sensitivity photoelectric detector based on C60 nanorods / ZnO quantum dots, which comprises the following steps of: synthesizing and preparinghigh-quality C60 nanorods through an improved solution interface molecule self-assembly process, and uniformly distributing a one-dimensional fullerene material prepared by the method on any clean substrate in a spin-coating or drop-coating manner; and introducing ZnO / quantum dots prepared through adoption of an atomic layer deposition method to enhance the light absorption capacity and photoelectric conversion efficiency of the whole photoactive layer, and successfully preparing the high-sensitivity photoelectric detector based on the C60 nanorod / ZnO quantum dots.

Description

technical field [0001] The invention belongs to the field of photodetectors, in particular to a C-based sensor with a significant response to blue-violet light 60 Construction method of nanorod / ZnO quantum dot high-sensitivity photodetector. Background technique [0002] C-based with tunable bandgap and wide optical absorption range 60 The nanostructure of materials is considered to be a potential material for building UV / Vis detectors. One-dimensional C 60 Nanostructures (nanowires and nanorods) exhibit light absorption features that depend on their diameter, C 60 The maximum light absorption wavelength of nanowires / nanorods ranges from 330 nm to 690 nm, which provides broad prospects for visible light optoelectronic nanodevices. Since the original C 60 Compared to an N-type C with suitable diameter 60 Nanowires / nanorods offer potentially better optoelectronic responses due to their good visible light absorption and higher mobility, and are therefore expected to be i...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48B82Y40/00B82Y15/00
CPCB82Y40/00B82Y15/00H10K71/12H10K71/40H10K30/152Y02E10/549
Inventor 崔大祥蔡葆昉王丹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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