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A kind of gallium nitride semiconductor photoelectrochemical etching solution and processing method

A photoelectrochemical, etching solution technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as inability to achieve etching speed, affect the performance of GaN-based devices, and avoid boundary effects. Effect

Active Publication Date: 2020-11-20
XIAMEN UNIV
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  • Description
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Problems solved by technology

However, the resulting two technical problems have been difficult to solve, namely: (1) the ideal etching rate (>10nm / min) cannot be achieved by using potassium persulfate oxidant; (2) the use of alkaline working solution to dissolve di Gallium inevitably produces boundary effects due to the diffusion of hydroxide ions, which makes the amount of hydroxide ions diffused from the solution to both sides of the trench always higher than that diffused into the trench when processing the most commonly used trench structures. The amount of intermediate, thus, the processed trench has a curved profile, which seriously affects the performance of GaN-based devices

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  • A kind of gallium nitride semiconductor photoelectrochemical etching solution and processing method
  • A kind of gallium nitride semiconductor photoelectrochemical etching solution and processing method
  • A kind of gallium nitride semiconductor photoelectrochemical etching solution and processing method

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Embodiment 1

[0029] figure 1 and figure 2 The gallium nitride surface groove structure ( figure 1 ) and its cross-sectional view ( figure 2 ).

[0030] Preparation and use method: use pure water to make etching solution (pH=3), its composition includes 10mM potassium hydrogen persulfate compound salt (K 2 SO 4 ·KHSO 4 ·2KHSO 5 ), 0.5mM phosphoric acid and phosphate buffer; the gallium nitride wafer that has been deposited on the surface with a metal platinum gate layer (thickness=100nm) is immersed in the above-mentioned etching solution; 2 After the gallium nitride wafer was irradiated with light intensity for one hour, it was taken out and washed with pure water; after the etched wafer was immersed in 20% (by weight) hydrofluoric acid solution for 10 minutes, it was taken out, washed with pure water, and dried.

[0031] The photoelectrochemically etched GaN wafer surface was characterized by optical method (LSM). figure 1 It is the groove structure on the surface of gallium nit...

Embodiment 2

[0033] image 3 and Figure 4 The gallium nitride surface groove structure ( image 3 ) and its cross-sectional view ( Figure 4 ).

[0034] Preparation and use method: use pure water to make etching solution (pH=6.5), its composition includes 5mM potassium hydrogen persulfate compound salt (K 2 SO 4 ·KHSO 4 ·2KHSO 5 ), 5mM phosphoric acid and phosphate buffer; the gallium nitride wafer with a layer of metal platinum gate layer (thickness=100nm) deposited on the surface is immersed in the above-mentioned etching solution; 2 After the gallium nitride wafer was irradiated with light intensity for 45 minutes, it was taken out and washed with pure water; after the etched wafer was immersed in 20% (by weight) hydrofluoric acid solution for 10 minutes, it was taken out, washed with pure water, and dried.

[0035] Optical methods were used to characterize the surface of GaN wafer after photoelectrochemical etching. image 3 It adopts the groove structure on the surface of gal...

Embodiment 3

[0037] Figure 5 and Figure 6 The gallium nitride surface groove structure ( Figure 5 ) and its cross-sectional view ( Figure 6 ).

[0038] Preparation and use method: adopt pure water to make etching solution (pH=2), its composition includes 40mM potassium hydrogen persulfate compound salt (K 2 SO4·KHSO 4 ·2KHSO 5 ) and 2mM phosphoric acid and phosphate buffer; the gallium nitride wafer with one deck metal platinum gate layer (thickness=100nm) deposited on the surface is immersed in the above-mentioned etching solution; 2 After irradiating the gallium nitride wafer with light intensity for half an hour, take it out, and wash it with pure water; after immersing the etched wafer in 20% (by weight) hydrofluoric acid solution for 10 minutes, take it out, wash it with pure water, and blow dry.

[0039] Optical methods were used to characterize the surface of GaN wafer after photoelectrochemical etching. Figure 5It adopts the groove structure on the surface of gallium ni...

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Abstract

The invention discloses a gallium nitride semiconductor photochemical etching solution and a processing method. The etching solution is prepared through pure water from, by molarity, 5-40 mM of potassium peroxymonosulfate sulfate compound salt (K2SO4 KHSO4 2KHSO5) and 0.05-5 mM of a pH buffer agent. The etching solution is scientific and reasonable in technological component and easy to prepare and is the innovation and improvement of existing gallium nitride semiconductor photochemical etching solutions, and the structures and etching faces with nanometer flatness and roughness can be processed.

Description

technical field [0001] The invention relates to a gallium nitride semiconductor photoelectrochemical etchant. Background technique [0002] The third-generation semiconductor material gallium nitride has been widely used in many fields such as electronics and optoelectronics. However, the chemical properties of gallium nitride are extremely inert, which makes the traditional wet etching method unable to be applied to the industrial processing of gallium nitride-based devices. At present, the industrial preparation of gallium nitride-based devices mainly relies on physical dry etching technology, but high-energy beam etching will inevitably cause damage to the processed surface and affect the final performance of the device. [0003] In recent years, studies have found that photoelectrochemical methods can efficiently and non-destructively etch gallium nitride, but there are still many technical problems to obtain high-quality surfaces, especially ultra-smooth surfaces. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/04H01L21/306
CPCC09K13/04H01L21/30612
Inventor 时康胡慧勤郭赛
Owner XIAMEN UNIV
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