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Wafer single side polishing method

A single-sided polishing, wafer technology, used in grinding/polishing equipment, work carriers, grinding machines, etc.

Active Publication Date: 2021-07-13
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the single-side polishing apparatus 200, the shape of the wafer after polishing may change depending on the usage time of the pad 22 and the holding ring 24, and there is a problem in stabilizing the flatness of the wafer.

Method used

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  • Wafer single side polishing method
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Experimental program
Comparison scheme
Effect test

Embodiment

[0068] (Inventive)

[0069] In order to confirm the effects of the present invention, figure 1 Single-sided polishing device and figure 2 The flowchart shown for single-sided polishing of the wafer, evaluating the deviation of the ESFQD of the polished wafer.

[0070] In the above evaluation, the following conditions are employed. As the polishing slurry, three kinds of polished slurrys having a water-soluble polymer (polyvinylpyrrolidone, molecular weight: 20000) that have been described, 27 ppm, 33 ppm, 50 ppm are prepared by pure water, 30-fold slurry. material. In addition, any polished slurry contains colloidal silica as a silica particles, which is 13% by mass in the stock solution, and the average primary particle diameter assay was 35 nm using a bet method. Further, the water-soluble base compound is tetramethylammonium hydroxide, and is adjusted to pH 10.5.

[0071] As a polishing pad, a polishing pad (registered trademark: polypas) is used as a polishing pad. As the line...

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Abstract

An object of the present invention is to provide a wafer single-side polishing method capable of obtaining a wafer having a desired ESFQD with high precision. The wafer polishing method of the present invention is characterized in that it includes the following steps: a first step (step S10) of calculating the protrusion amount of the wafer (=the central thickness of the wafer−the thickness of the holding ring); determining the amount of protrusion in the polishing slurry based on the protrusion amount The second process (step S20) of the concentration of the water-soluble polymer contained; and rotating the rotary table and the polishing head in opposite directions, supplying the polishing slurry with the concentration of the water-soluble polymer determined by the second process to the polishing pad, and simultaneously A third step of polishing one side of the wafer (step S30 ).

Description

Technical field [0001] The present invention relates to a single-sided polishing method of a wafer. Background technique [0002] As one of the surface polishing methods required to high plane, there is one of the surface polishing method of the wafer, and there is a single-sided polishing method of only the wafer. Single-sided polishing method is widely used in the range of thick polishing pads using a relatively hard polishing pad to use the range of refined polishing pads. [0003] In thick polishing, in the past Figure 4 The single-sided polishing apparatus 200 is shown. The single-sided polishing apparatus 200 has a rotary platform 10 attached to a polishing pad 12 for polishing a wafer W. Further, the single-sided polishing apparatus 200 has a polishing head 20 having a retaining ring (Retainer) as a liner 22 as another holding surface of the wafer W and an outer edge portion of the retention surface of the liner 22 (Retainer) Ring) 24 and is configured with the rotating pl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/10B24B57/02B24B37/30
CPCB24B37/105B24B57/02B24B37/30
Inventor 杉森胜久小佐佐和明佐藤洋三
Owner SUMCO CORP