Gate-enhanced light-controlled silicon-controlled-thyristor electrostatic release device structure and manufacturing method thereof

Abstract

The present invention discloses a gate-enhanced light-controlled silicon-controlled-thyristor electrostatic release device structure, including a substrate P-Sub. A DN-Well region is provided in the substrate P-Sub. A first P a Well zone and a second P-Well zone are provided in the DN-Well region. A first polysilicon gate and a second P+implant zone are provided in the first P-Well zone. A third P+implant zone and a second polysilicon gate are provided in the second P-Well zone. In the present invention, the first polysilicon gate, the second P+implant region, the third P+implant region, and the second polysilicon gate form a gate-enhanced light-controlled structure, so that a holding voltage of a two-way silicon controlled device can be adjustable. That is, photo-generated carriers generated by avalanche multiplication are used to adjust concentrations of P-Well and DN-Well, so that a concentration of a base region of a parasitic BJT changes, and an objective of changing emission efficiency and regulating and controlling the holding voltage is achieved.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a structure of a grid-enhanced light-controlled thyristor electrostatic discharge device and a manufacturing method thereof. Background technique [0002] With the continuous progress of society and the continuous improvement of scientific level, the development of integrated circuits has entered the nanometer level. Electrostatic discharge (ESD) is one of the main causes of failure of integrated circuit chips, and the accumulation of static electricity is located in every aspect of human daily life. Therefore, more and more IC design engineers begin to pay attention to the protection of semiconductor ESD. According to relevant data, in the environment of integrated circuit and microelectronics, more than 58% of electronic products fail due to ESD phenomenon, and the resulting economic losses reach hundreds of billions. This data fully demonstrates the importance of elect...

AI Technical Summary

Problems solved by technology

However, since the triggering of traditional thyristors depends on the avalanche breakdown voltage of the reverse-biased PN junction on the trigger surface, the trigger voltage of this structure is relatively high

When the BJT is fully turned on, the maintenance voltage of the device is very low and cannot be adjusted, and it is easy to generate a latch inside the device, and when the traditional thyristor is used in a high-voltage environment, the ESD resistance of the device is also slightly insufficient

These defects will make the internal core circuit of the protected chip not effectively protected

Images