A kind of preparation method of tin diselenide film
A technology of tin diselenide and thin film is applied in the field of preparation of tin diselenide thin film, which can solve the problems such as difficult control of input material ratio, complicated preparation process, long reaction time, etc., and achieves short duration, simple operation, and is beneficial to production. Effect
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[0022] see figure 1 As shown, this embodiment provides a preparation method of a tin diselenide film, including the steps:
[0023] S1, providing a substrate, and placing the substrate in a molecular beam epitaxy apparatus;
[0024] S2. Add a selenium source and a tin source to the molecular beam epitaxy equipment respectively, heat the selenium source and the tin source respectively through the molecular beam epitaxy equipment, and separate the selenium source and the tin source with molecular beam or atomic beam respectively. The form of a beam is sprayed onto the substrate to form a thin film of tin diselenide.
[0025] In the present invention, the selenium source and the tin source are respectively added into different source furnaces of the molecular beam epitaxy equipment, and the selenium source and the tin source are heated and melted respectively, so that the selenium source and the tin source are sprayed onto the substrate in the form of molecular beam or atomic be...
Embodiment 1
[0035] Exemplarily, in the step S2, the selenium source is first heated to 290°C to 310°C, the tin source is heated to 1050°C to 1150°C, and the substrate is heated to 240°C to 260°C. The selenium source and the tin source are sprayed onto the substrate in the form of a molecular beam or an atomic beam to form a tin diselenide film.
[0036] More specifically, in this embodiment, the implementation process of the preparation method of the tin diselenide film is as follows:
[0037] In this embodiment, glass with a size of 99×99mm is used as the substrate, the substrate is repeatedly cleaned for about tens of minutes with deionized water, and the cleaned substrate is baked for about ten minutes under vacuum conditions. The cooled substrate is then placed on the sample holder of the molecular beam epitaxy apparatus.
[0038] Use selenium particles and tin particles with a purity of more than 99.99% as the selenium source and the tin source, respectively, put the selenium source...
Embodiment 2
[0041] Exemplarily, in the step S2, the selenium source is first heated to 265° C. to 280° C., the tin source is heated to 1050° C. to 1,150° C., and the substrate is heated to 200° C. to 220° C. The selenium source and the tin source are sprayed onto the substrate in the form of a molecular beam or an atomic beam to form a tin diselenide film.
[0042] More specifically, in this embodiment, the implementation process of the preparation method of the tin diselenide film is as follows:
[0043] In this embodiment, a silicon wafer with a size of about 4 inches is used as the substrate, and the substrate is ultrasonically cleaned with acetone, alcohol and deionized water for about 15 minutes, and the cleaned substrate is dried under vacuum conditions for 1 After cooling, it is placed on the sample holder of the molecular beam epitaxy equipment;
[0044] Use selenium particles and tin particles with a purity of more than 99.99% as the selenium source and the tin source, respectiv...
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Abstract
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