Semiconductor device and forming method and working method thereof

Abstract

Disclosed are a semiconductor device and a forming method and a working method thereof; the semiconductor device comprises a semiconductor substrate, and a connecting gasket, a testing gasket and a wire located on the surface of the semiconductor substrate, wherein the semiconductor substrate comprises a device area and a non-device area; the semiconductor substrate device area is internally provided with a device main body and an interconnection structure which are electrically connected with each other; the connecting gasket is electrically connected with the testing gasket through the wire;the connecting gasket is located in the device area of the semiconductor substrate, and the testing gasket is located in the non-device area of the semiconductor substrate; and the wire is used for being fused after probe test is carried out, so that the connecting gasket and the testing gasket are disconnected. The performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and its forming method and working method. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transisto...

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Problems solved by technology

[0004] However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved

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