Unlock instant, AI-driven research and patent intelligence for your innovation.

Producing method of mask integrated frame

A manufacturing method and integrated technology, which can be used in semiconductor/solid-state device manufacturing, electrical solid-state device, ion implantation and plating, etc., can solve problems such as low yield and defective products, improve yield, shorten manufacturing time, prevent deformation effect

Inactive Publication Date: 2019-09-17
TGO TECH CORPORATION
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, considering the pixel size of ultra-high-definition OLEDs, it is necessary to reduce the alignment error between each unit to a few μm. Exceeding this error will lead to defective products, so the yield may be extremely low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Producing method of mask integrated frame
  • Producing method of mask integrated frame
  • Producing method of mask integrated frame

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0061] The detailed description of the invention which follows will refer to the accompanying drawings, which illustrate by way of example specific embodiments in which the invention can be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the invention, although different from each other, are not necessarily mutually exclusive. For example, specific shapes, structures, and characteristics described here relate to one embodiment, and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual constituent elements in each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Therefore, the following detailed description should not be regarded as restrictive, and the scope ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a method for manufacturing a frame-integrated mask. A method for manufacturing a frame-integrated mask, according to the present invention, in which at least one mask (100) and a frame (200) for supporting the mask (100) are integrally formed, comprises the steps of: (a) providing a frame (200) having at least one mask cell region (CR); (b) corresponding a mask (100) to the mask cell region (CR) of the frame (200); (c) raising (ET) the temperature of a process region including the frame (200) to a first temperature; (d) bonding at least a portion of an edge of the mask (100) to the frame (200); and (e) lowering (LT) the temperature of the process region including the frame (200) to a second temperature.

Description

technical field [0001] The present invention relates to a method of manufacturing a frame-integrated mask. More specifically, it relates to a method of manufacturing a frame-integrated mask capable of integrating a mask with a frame and enabling precise alignment between masks. Background technique [0002] Recently, research on electroforming (Electroforming) methods in thin plate manufacturing is underway. In the electroforming method, an anode and a cathode are immersed in an electrolyte solution, and a power source is applied to electrodeposit a thin metal plate on the surface of the cathode. Therefore, it is a method that can manufacture electrode sheets and is expected to be mass-produced. [0003] On the other hand, as a technique for forming pixels in the OLED (Organic Light Emitting Diode) manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which uses a metal mask (Shadow Mask) in the form of a thin film ) adheres to the substrate and deposits ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/24C23C14/12
CPCC23C14/042C23C14/24C23C14/12H10K71/00H10K71/166C23C14/04H01L21/033H01L21/0337H10K71/233
Inventor 李炳一
Owner TGO TECH CORPORATION