Marangoni effect-based wafer post-treatment system and method

A post-processing and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as water marks, poor wafer drying effect, and easy residual liquid, so as to reduce liquid residue and improve drying effect. , to achieve the effect of cleaning and drying

Pending Publication Date: 2019-09-20
TSINGHUA UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional spin drying method, due to the large thickness of the remaining water film after drying, may even be higher than 200nm, which can easily cause water mark defects
[0006] To sum up, in the prior art, there are problems of poor wafer drying effect and easy residual liquid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Marangoni effect-based wafer post-treatment system and method
  • Marangoni effect-based wafer post-treatment system and method
  • Marangoni effect-based wafer post-treatment system and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The technical solutions of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings. The examples described here are specific implementations of the present invention and are used to illustrate the concept of the present invention; these descriptions are all explanatory and exemplary, and should not be construed as limiting the implementation of the present invention and the protection scope of the present invention . In addition to the embodiments described here, those skilled in the art can also adopt other obvious technical solutions based on the claims of the application and the contents disclosed in the specification, and these technical solutions include adopting any modifications made to the embodiments described here. Obvious alternatives and modified technical solutions. It should be understood that, unless otherwise specified, for ease of understanding, the following descriptions of the specifi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of chemical mechanical polishing post-treatment, and discloses a Marangoni effect-based wafer post-treatment system and method. The system comprises a wafer lifting device and a gas spraying device, wherein the wafer lifting device is used for pulling a wafer immersed in a cleaning liquid from the cleaning liquid, the gas spraying device is used for spraying a dried gas at a first temperature to a bent liquid surface region of the cleaning liquid attached onto a surface of the wafer during the process of lifting the wafer from the cleaning liquid, so that an attachment substance on the surface of the wafer is stripped from the surface of the wafer according to a direction opposite to a lifting direction.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing post-processing, in particular to a wafer post-processing system and method based on the Marangoni effect. Background technique [0002] Chemical Mechanical Planarization (CMP) is an ultra-precision surface processing technology for global planarization in integrated circuit (IC) manufacturing. With the development of integrated circuit manufacturing technology, the control of wafer surface defects is becoming more and more stringent. During the wafer manufacturing process, the surface of the wafer will absorb pollutants such as particles or organic matter to generate a large number of defects, which require post-processing to remove these defects. [0003] In particular, chemical reagents and abrasives used in large quantities in chemical mechanical polishing will cause contamination on the wafer surface, so after polishing, a post-treatment process is required to remove th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/02041H01L21/67034
Inventor 李长坤赵德文路新春
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products