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Electrostatic chuck temperature control method, system, and semiconductor processing equipment

A temperature control method, electrostatic chuck technology, applied in the direction of temperature control, control/regulation system, non-electric variable control, etc., can solve the problems of slow cooling rate, increased cost, high cost, etc., to shorten the process time and improve economic benefits , cost reduction effect

Active Publication Date: 2022-04-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Obviously, in the temperature control system of the above-mentioned electrostatic chuck, firstly, the heating rate is limited by the output power of a single heating power supply, and it is impossible to reach the required temperature quickly.
Secondly, the flow rate of the cooling medium output by the refrigerator is fixed, so the cooling rate of each temperature load area of ​​the electrostatic chuck is relatively slow, and only the natural cooling after the heating is turned off
Finally, each temperature load area needs to correspond to a temperature controller, which is costly, especially when the wafer size continues to increase (such as greater than or equal to 300mm, especially 450mm), and the process line width gradually decreases (such as below 20nm process), the number of required temperature adjustment areas is also increasing, from the original 2 areas to 4 areas, 8 areas, 16 areas or even 32 areas, the number of temperature controllers increases, and the cost increases sharply

Method used

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  • Electrostatic chuck temperature control method, system, and semiconductor processing equipment
  • Electrostatic chuck temperature control method, system, and semiconductor processing equipment
  • Electrostatic chuck temperature control method, system, and semiconductor processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0125] Each temperature load zone enters the keep warm mode.

[0126] Step S130 includes:

[0127] Provide predetermined low-voltage input power to the heating modules corresponding to each temperature load zone, and implement a pulse input mode.

[0128] Provide a cooling medium with a constant flow rate to the cooling modules corresponding to each temperature load zone, and implement a continuous input mode.

[0129] It should be noted that the predetermined low-voltage input power means that the heating module 220 provides heating power to the heating module 220 through the low-voltage power supply 122 . The predetermined high-voltage input power described below means that the heating module 220 provides heating power to the heating module 220 through the high-voltage power supply 121 .

[0130] combine Figure 6 Specifically, the second switch B2 is normally open, the third switch B3 and the fourth switch B4 maintain a pulse switching state, so that the low-voltage powe...

Embodiment 2

[0134] Each temperature load zone enters the heating mode.

[0135] Step S130 includes:

[0136] The rapid heating stage, the precise heating stage and the temperature maintenance stage are carried out in sequence.

[0137] Wherein, the rapid heating stage comprises the following steps:

[0138] Provide predetermined low-voltage input power and high-voltage input power to the heating modules corresponding to each temperature load zone, and implement continuous input mode;

[0139] Provide cooling medium to the cooling modules corresponding to each temperature load zone, and implement pulse input mode;

[0140] When the current temperature of each temperature load zone has a preset difference with the target temperature, the step of the precise temperature raising stage is executed.

[0141] Specifically, such as Figure 6 As shown, the first switch B1, the second switch B2, the third switch B3 and the fourth switch B4 are kept normally open, so that the output power of the...

Embodiment 3

[0151] Each temperature load zone enters the cooling mode.

[0152] Step S130 includes:

[0153] The rapid cooling stage, the precise cooling stage and the temperature maintenance stage are carried out in sequence.

[0154] The rapid cooling phase includes the following steps:

[0155] Stop supplying input power to the heating modules corresponding to each temperature load zone, that is, implement disconnection mode.

[0156] The cooling module corresponding to each temperature load zone is provided with a cooling medium with a continuously increasing flow rate, and a continuous input mode is implemented.

[0157] When the current temperature of each temperature load zone has a preset difference with the target temperature, the step of the precise temperature reduction phase is performed.

[0158] Specifically, such as Figure 6 As shown, the first switch B1 , the third switch B3 and the fourth switch B4 are all kept normally closed, and the second switch B2 is kept normal...

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Abstract

The invention discloses a temperature control method of an electrostatic chuck, a temperature control system of the electrostatic chuck and semiconductor processing equipment. The electrostatic chuck includes at least two temperature load areas, and each temperature load area corresponds to a heating module and a cooling module. The temperature control method includes detecting and obtaining the corresponding current temperature of each temperature load area; the central control unit receives the instruction information and according to the instruction Information and the current temperature of each temperature load area, adjust the power input mode of the heating module and the cooling mode of the cooling module corresponding to each temperature load area, so that the adjusted temperature of each temperature load area matches the predetermined target temperature. Therefore, the heating rate and cooling rate of the different temperature load regions of the electrostatic chuck can be significantly improved, the process time can be shortened, the output can be increased, and the economic benefit can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a temperature control method for an electrostatic chuck, a temperature control system for an electrostatic chuck, and a semiconductor processing device. Background technique [0002] Generally, in the wafer etching process, a very important technical index is the process uniformity. The factors that determine the uniformity index include the uniformity of the electric field in the chamber, the uniformity of the magnetic field, the uniformity of the temperature, the air flow field Uniformity and other physical fields, so there are many adjustment parameters, especially in the 300mm and larger 450mm wafer process, more adjustable parameters are needed to achieve process uniformity. In the silicon etching process, temperature is a very critical factor. In the etching process below 90nm, the original electrostatic chuck with a single temperature zone can no longer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05D23/20
CPCG05D23/20
Inventor 成晓阳
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD