Deposition chamber for improving gas distribution and MPCVD device

Abstract

The invention belongs to the technical field of microwave plasma chemical vapor deposition, and particularly relates to a deposition chamber for improving gas distribution and an MPCVD device. The deposition chamber comprises a base part, an outer cover body and a deposition table, wherein the outer cover body is hermetically mounted on the base part so as to form a reaction cavity with the base part; the deposition table is arranged on the side, facing the reaction cavity, of the base part, and the base part is provided with an gas inlet channel and an exhaust channel which both communicate with the reaction cavity; the deposition chamber for improving the gas distribution further comprises an air guide channel which is located on the inner side of the outer cover body and extends towardsthe upper part of the reaction cavity, the air guide channel is in butt joint communication with the gas inlet channel, the upper part of the air guide channel communicates with the reaction cavity so as to guide gas input by the gas inlet channel to the upper part of the reaction cavity. The gas guide channel guides upwards the gas entering the deposition chamber, so that the gas can pass through the deposition station before being discharged from the exhaust channel, the utilization rate of the gas is improved, and the reaction efficiency of a deposition device is improved at the same time.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular relates to a deposition chamber and an MPCVD device for improving gas distribution. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD for short) is to use the microwave generated by the microwave generator to enter the deposition chamber through the isolator through the isolator, and to excite the ionization of gas molecules in the deposition chamber to generate plasma, so that in the deposition chamber The process technology in which the surface of the medium substrate reacts and generates a thin film of solid matter, and then deposits the solid material. [0003] For example, the Chinese invention patent with the authorized announcement number CN106987827B discloses a plasma chemical vapor deposition microwave resonant cavity and device. The deposition chamber of the device is surrounded by a frequency tuning pla...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a deposition chamber with improved gas distribution, so as to solve the problem that the gas inlet and outlet of the deposition chamber are all arranged on the bottom plate in the prior art, which causes uneven distribution of gas on the surface of the base platform of the deposition chamber

The object of the present invention is also to provide a kind of MPCVD device, to solve the problem that the gas inlet and the gas outlet of the deposition chamber of the chemical vapor deposition device in the prior art are all arranged on the base plate, and the gas cannot fully react in the deposition chamber and affect the entire chemical vapor phase. Technical Problems of Reaction Efficiency of Deposition Device

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