Three-level traction power module and inverter circuit based on sic power devices

Abstract

The invention relates to a three-level traction power module and an inverter circuit based on SiC power devices. The inverter main circuit adopts an I-type three-level inverter bridge structure. Capacitor module, laminated busbar, driver module, SiC power module and heat sink; SiC power module adopts SiC-MOSFET and SiC-DIODE power device, the driver module is connected with the SiC power module, and the controller is connected with the The driving module is connected to control the on-off of the SiC power module; the supporting capacitor module is connected to the SiC power module, and the SiC power module is fixedly connected to a heat sink. The traction power module of the present invention adopts an integrated and systematic design, and utilizes the high-frequency and high-temperature characteristics of SiC power devices to effectively reduce the volume and weight of the module. Compared with traditional power modules based on Si devices, the performance of the traction power module is greatly improved. improve.

Description

technical field [0001] The invention belongs to the technical field of traction inverter, and in particular relates to a three-level traction power module and an inverter circuit based on SiC power devices. Background technique [0002] At present, most high-power inverters use Si-IGBT as the core power device. The switching frequency of traction inverters based on Si power devices is generally below 1kHz. In order to ensure the quality of the three-phase current output by the traction inverter, complex The segmental synchronous modulation control method not only increases the complexity of the system control, but also easily generates a current shock when switching between different modulations, which affects the safety and reliability of the system. At the same time, the Si-IGBT device has a large loss, resulting in a large volume and weight of the inverter heat dissipation system. [0003] Compared with Si-IGBT, SiC power device, as a new type of wide bandgap semiconduct...

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Problems solved by technology

[0002] At present, most high-power inverters use Si-IGBT as the core power device. The switching frequency of traction inverters based on Si power devices is generally below 1kHz. In order to ensure the quality of the three-phase current output by the traction inverter, complex Segmented synchronous modulation control method, which not only increases the complexity of system control, but also easily generates current shock when switching between different modulations, which affects the safety and reliability of the system

At the same time, the Si-IGBT device has a large loss, resulting in a large volume and weight of the inverter cooling system

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