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Power device and making method thereof

A technology of power devices and trenches, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as leakage currents

Pending Publication Date: 2019-10-15
苏州迈志微半导体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when avalanche breakdown is encountered in device applications, it is usually necessary to discharge a large enough current

Method used

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  • Power device and making method thereof
  • Power device and making method thereof
  • Power device and making method thereof

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Embodiment Construction

[0023] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0024] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

The invention relates to a power device. The power device is divided into a cell region, a transition region, and a terminal region. The power device comprises a substrate, a first epitaxial layer disposed over the substrate, a second epitaxial layer disposed over the first epitaxial layer, multiple body regions disposed in the second epitaxial layer, multiple cell region trenches disposed in thesecond epitaxial layer of the cell region, multiple transition region trenches disposed in the second epitaxial layer of the transition region and multiple terminal region trenches disposed in the second epitaxial layer of the terminal region. The thicknesses of dielectric layers at the bottom of the transition region trench and the bottom of the terminal region trench are larger than the thickness of the dielectric layer at the bottom of the cell region trench.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a power device, a manufacturing method thereof, and an electronic device including the power device. Background technique [0002] In view of the device structure of the deep trench MOSFET, when the device reverse withstand voltage, the electric field intensity at the bottom of the trench is usually the largest. When the device reaches the breakdown voltage, avalanche ionization occurs at the bottom corner of the trench, resulting in a large avalanche current. [0003] The deep trench power device structure also includes a cell area, a transition area, and a terminal area. The three areas are also composed of several trenches. The transition area and the terminal area do not participate in the conduction of the device, and their functions are to protect and isolate cell area. Because of this, the area of ​​the transition zone and the terminal zone will not be too lar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/0634H01L29/66477H01L29/78
Inventor 陈文高杨东林刘侠
Owner 苏州迈志微半导体有限公司
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